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Part: BD242BFI
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Datasheet: Download BD242BFI datasheet File size : 141 kB
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BD241BFI BD242BFI
COMPLEMENTARY SILICON POWER TRANSISTORS
s s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES
APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241BFI is silicon epitaxial-base NPN t ransistors mounted in ISOWATT220 plastic package. I t is are inteded for power linear and switching applications. The complementary PNP types is the BD242BFI.
3 1 2
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l P ar am et e r NP N P NP V CER V CE O V EBO IC ICM IB Pt o t Tstg Tj C ol lec t o r - B a s e V o lt a g e (R BE = 1 00 ) C ol lec t o r - E m it t e r V o lt a ge ( I B = 0 ) E m i t t er - B as e V olt a ge ( I C = 0 ) C ol lec t o r C u r r en t C ol lec t o r P e a k C ur r e n t B as e C u r r ent T ot al Di s s ipa t ion at T c 2 5 C S t o ra g e T e m pe r a t u r e M a x . O pe r a t in g J un c t i on T e m p er at u re
o
V al u e B D 2 41B F I B D 2 42B F I 90 80 5 3 5 1 18 - 65 t o 1 50 150
U ni t
V V V A A A W
o o
C C
For PNP types voltage and current values ar e negative.
April 1997
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BD241BFI/BD242BFI
THERMAL DATA
R t h j - c a se T h e r m a l R e s i s t a n ce J u nc t i o n- c as e M ax 7
o
C/ W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb o l I CE O I CES I EBO P a r a m et e r C o l le c t o r C u t - of f C u r re n t (IB = 0 ) C o l le c t o r C u t - of f C u r re n t (V BE = 0 ) E m i t t er C u t - o f f C ur r e n t (IC = 0 ) T est C o n d i t i o n s V C E = 60 V V C E = 80 V V EB = 5 V I C = 30 m A 80 Mi n. T yp . M a x. 0. 3 0. 2 1 Un i t mA mA mA V
V CE O( s u s ) C o l le c t o r- E m i t t e r S u s t ain ing V olt ag e ( I B = 0) V C E ( s a t ) V BE ( ON) h F E* C o l le c t o r- E m i t t e r S a t ur at ion V olt a ge B a s e - E m it t er V o lt a g e D C C u r r e n t G ai n
IC = 3 A IC = 3 A IC = 1 A IC = 3 A
I B = 0. 6 A V CE = 4 V V CE = 4 V V CE = 4 V 25 10
1. 2 1. 8
V V
Pulsed: Pulse duration = 300 µs , duty cycle 2 % For PNP types voltage and current values are negative.
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BD241BFI/BD242BFI
ISOWATT220 MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 ¯ F
D
G1
E
H
F2
123 L2 L4
P011G
G
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BD241BFI/BD242BFI
Information furnished is be lieved to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . ..
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