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Part: BDX53BFI
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Datasheet: Download BDX53BFI datasheet File size : 192 kB
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BDX53BFI BDX54BFI
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s
COMPLEMENTARY PNP - NPN DEVICES
APPLICATIONS: s GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDX53BFI is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration and are mounted in ISOWATT220 plastic package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP type is the BDX54BFI.
3 1 2
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K
R 2 T yp. = 150
ABSOLUTE MAXIMUM RATINGS
S ym b o l P ar am et e r NP N P NP V CB O V CE O V EBO IC ICM IB Pt o t Tstg Tj C ol lec t o r - B a s e V o lt a g e (IE = 0 ) C ol lec t o r - E m it t e r V o lt a ge ( I B = 0 ) E m i t t e r - ba s e V o lt a g e ( I C = 0 ) C ol lec t o r C u r r en t C ol lec t o r P e a k C ur r e n t ( re p e t it i v e) B as e C u r r ent T o t a l D i s s ip a t io n a t T c 25 o C S t o ra g e T e m pe r a t u r e M a x . O pe r a t in g J un c t i on T e m p er at u re V al u e B DX 53B F I B DX 54B F I 80 80 5 8 12 0.2 30 - 65 t o 1 50 150 V V V A A A W
o o
U ni t
C C
For PNP types voltage and current values ar e negative.
May 1997
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BDX53BFP / BDX54BFP
THERMAL DATA
R t h j - c a se R t h j- a mb T h e r m a l R e s i s t a n ce J u nc t i o n- c as e T h e r m a l R e s i s t a n ce J u nc t i o n- am bien t M ax Ma x 4 . 17 70
o o
C/ W C/ W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb o l I CB O I CE O I EBO
P a r a m et e r C o l le c t o r C u t - of f C u r re n t (IE = 0 ) C o l le c t o r C u t - of f C u r re n t (IB = 0 ) E m i t t er C u t - o f f C ur r e n t (IC = 0 )
T est C o n d i t i o n s V C B = 80 V V C B = 40 V V EB = 5 V I C = 10 0 m A
Mi n.
T yp .
M a x. 0. 2 0. 5 2
Un i t mA mA mA V
V CE O( s u s ) C o l le c t o r- E m i t t e r S u s t ain ing V olt ag e ( IB = 0 ) V C E ( s a t ) V B E ( s a t ) h F E V F C o lle c t o r- e m i t t e r S a t ur at ion V olt a ge B a s e - e m it t er S a t ur at ion V olt a ge D C C u r r e n t G ai n P a r a llel- d io d e F or w a r d V o lt age
80
IC = 3 A IC = 3 A IC = 3 A IF = 3 A IF = 8 A
I B = 12 m A I B = 12 m A V CE = 3 V 750 1.8 2.5
2 2. 5
V V
2. 5
V V
Pulsed: Pulse duration = 300 µs , duty cycle 1.5 % For PNP types voltage and current values are negative.
Safe Operating Area
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BDX53BFP / BDX54BFP
ISOWATT220 MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 ¯ F
D
G1
E
H
F2
123 L2 L4
P011G
G
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BDX53BFP / BDX54BFP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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