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Part: BFP193Q62702-F1282

Category:
 Discrete
   -> Transistors

Description: Transistor Sot143

Company:

Datasheet: Download BFP193Q62702-F1282 datasheet     File size : 104 kB

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Datasheet text preview:
BFP 193
NPN Silicon RF Transistor · For low noise, high-gain amplifiers up to 2GHz · For linear broadband amplifiers · fT = 8GHz

F = 1.3dB at 900MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193 RCs Q62702-F1282 1=C 2=E 3=B 4=E

Package SOT-143

Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 580 150 - 65 ... + 150 - 65 ... + 150 135 °C mA Unit V

VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg
1)

TS 72 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point

RthJS

K/W

1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group

1

Dec-13-1996

BFP 193

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit

V(BR)CEO
12 100 -

V µA 100 nA 100 µA 1 50 200

IC = 1 mA, IB = 0
Collector-emitter cutoff current

ICES ICBO IEBO hFE

VCE = 20 V, VBE = 0
Collector-base cutoff current

VCB = 10 V, IE = 0
Emitter-base cutoff current

VEB = 1 V, IC = 0
DC current gain

IC = 30 mA, VCE = 8 V

Semiconductor Group

2

Dec-13-1996

BFP 193

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit

fT
6 8 0.6 0.25 1.8 -

GHz pF 0.9 dB 1.3 2.1 -

IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance

Ccb Cce
-

VCB = 10 V, f = 1 MHz
Collector-emitter capacitance

VCE = 10 V, f = 1 MHz
Emitter-base capacitance

Ceb
-

VEB = 0.5 V, f = 1 MHz
Noise figure

F

IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)

G ma

IC = 30 mA, VCE = 8 V, ZS = ZSopt Z L = Z Lopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 14.5 8.5 17.5 11.5 -

IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)

Semiconductor Group

3

Dec-13-1996

BFP 193

SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.2738 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 24 1.935 3.8742 0.94371 1.8368 1.1824 18.828 0.96893 1.1828 1.0037 0 3 V V fF ps mA V ns -

BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =

125 0.26949 14.267 1 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063

A V deg fF -

NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM

0.95341 10.627 1.4289 0.91763 0.11938 0.48654 0.8 935.03 0.75 1.11 300

fA mA V fF V eV K

0.037925 A

0.037409 fA

0.053563 -

All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG

Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.84 0.65 0.31 0.14 0.07 0.42 145 19 281 nH nH nH nH nH nH fF fF fF

Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group

4

Dec-13-1996

BFP 193

Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy

600 mW 500

P tot
450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 ° C 150 TA ,TS

TS

TA

Permissible Pulse Load RthJS = f (tp)

Permissible Pulse Load Ptotmax/PtotDC = f (tp)

10 3

10 2

K/W

RthJS
10 2

Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0

10 1

10 0 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

10 s 10 IC

-1

0

10 0 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

10 s 10 tp

-1

0

Semiconductor Group

5

Dec-13-1996




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