|
|
Part: BFT25/T1
Category:
Discrete
-> Transistors
Description: Transistor RF Sot-23
Company:
Datasheet: Download BFT25/T1 datasheet File size : 90 kB
Request For quote: Find where to buy BFT25/T1
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT25 NPN 2 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 November 1992
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN 1 2 3 base emitter collector
1 Top view
BFT25
DESCRIPTION Code: V1p
fpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot fT Cre GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance up to Ts = 167 °C; note 1 IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 MHz; Tamb = 25 °C open base CONDITIONS open emitter - - - - 2.3 - 18 3.8 TYP. MAX. 8 5 6.5 30 - 0.45 - - UNIT V V mA mW GHz pF dB dB
maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C noise figure IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature f > 1 MHz up to Ts = 167 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN. 8 5 2 6.5 10 30 150 175 MAX. V V V mA mA mW °C °C UNIT
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts = is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance CONDITIONS IE = 0; VCB = 5 V IC = 10 µA; VCE = 1 V IC = 1 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz IE = ie = 0; VCB = 0.5 V; f = 1 MHz Ic = ic = 0; VEB = 0; f = 1 MHz IC = 1 mA; VCE = 1 V; f = 1 MHz; Tamb = 25 °C - 20 20 1.2 - - - - - - - MIN. - 30 40 2.3 - - - 18 12 5.5 3.8 TYP. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 167°C; note 1
BFT25
THERMAL RESISTANCE 260 K/W
MAX. 50 - - - 0.6 0.5 0.45 - - - -
UNIT nA
GHz pF pF pF dB dB dB dB
maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; (note 1) Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 800 MHz; Tamb = 25 °C
F
noise figure
IC = 0.1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C
Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 -G U M = 10 log ---------------------------------------------------------- dB. 2 2 1 S 11 1 S 22
2
November 1992
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
MEA908
MEA914
handbook, halfpage
60
1 Cc (pF) 0.8
h FE
40 0.6
0.4 20 0.2
0 10 3
10 2
10 1
0 1 I C (mA) 10 0 2 4 6 8
10 V CB (V)
VCE = 1 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.2
DC current gain as a function of collector current.
Fig.3
Collector capacitance as a function of collector-base voltage.
handbook, halfpage
3
MEA907
MEA909
8 handbook, halfpage F (dB) 6
fT (GHz) 2
4
1 2
0 0 0.5 1 1.5 I C (mA) 2
0 10 2
10 1
1
I C (mA)
10
VCE = 1 V; f = 500 MHz; Tj = 25 °C.
VCE = 1 V; ZS = opt.; f = 500 MHz; Tamb = 25 °C.
Fig.4
Transition frequency as a function of collector current.
Fig.5
Minimum noise figure as a function of collector current.
November 1992
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 j 500 0.2 800 MHz 5 0.2 0.5 1 2 5 10
10
200
0.5 1 IC = 1 mA; VCE = 1 V; Tamb = 25 °C. Zo = 50 .
2
MEA916
Fig.6 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90° 120° 60°
150° 200
500
800 MHz
30°
+
180° 1 2 3 0°
-
150°
30°
120° 90° IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
60°
MEA918
Fig.7 Common emitter forward transmission coefficient (S21).
November 1992
5
Others parts begin by bf
BF-1 BF-2 BF-3 BF-4 BF-5 BF-6 BF-7 BF-8
|
|
|
