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Part: BLW50F/B
Category:
Discrete
-> Transistors
Description: Transistor RF Sot-123
Company:
Datasheet: Download BLW50F/B datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW50F HF/VHF power transistor
Product specification File under Discrete Semiconductors, SC08a August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW50F
QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b. (class-AB) Note 1. At 65W P.E.P. PIN CONFIGURATION
halfpage
VCE V 45 50
f MHz 1,6 - 28 1,6 - 28
PL W 0 - 16 (P.E.P.) >
Gp dB 19,5
dt % - typ. 45(1)
IC A 1,2 1,45
IC(ZS) mA - 50 <
d3 dB -40 typ. -30
Th °C 70 25
10 - 65 (P.E.P.) typ. 18
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz D.C. and r.f. (f > 1 MHz) power dissipation; Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Ptot; Prf Tstg Tj max. max. max. max. max. max. max.
BLW50F
110 V 55 V 4V 2,5 A 7,5 A 94 W 200 °C
-65 to + 150 °C
MGP466
handbook, halfpage
10
handbook, halfpage
150
MGP467
IC (A)
Prf (W) Tmb = 25 °C 100 Th = 70 °C
1
50
10-1 1 10 VCE (V) 102
0 0 50 Th (°C) 100
I Continuous d.c. and r.f. operation II Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 Power derating curves vs. temperature.
THERMAL RESISTANCE (dissipation = 54 W; Tmb = 86 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. and r.f. dissipation) From mounting base to heatsink Rth j-mb Rth mb-h = = 2,1 K/W 0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; IC = 25 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 55 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE devices(1) hFE1/hFE2 VCEsat MHz(1) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. > ICES V(BR) CEO > V(BR) CES >
BLW50F
110 V 55 V 4V 10 mA 8 mJ 8 mJ
IC = 1,2 A; VCE = 5 V D.C. current gain ratio of matched IC = 1,2 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 3,0 A; IB = 0,6 A Transition frequency at f = 100 -IE = 1,2 A; VCB = 45 V -IE = 4,0 A; VCB = 45 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 45 V Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 45 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 µs; 0,02.
typ. 25 15 to 100 1,2 1,2 V 490 MHz 540 MHz 53 pF 35 pF 2 pF
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
handbook, halfpage
10
MGP468
handbook, halfpage
40
MGP469
VCE = 45 V
IC (A) typ 1
hFE 30 5V
20 10-1 10
10-2
0
0.5
1
VBE (V)
1.5
0 0 1 2 IC (A) 3
Fig.4 VCE = 40 V; Tmb = 25 °C.
Fig.5 Typical values; Tj = 25 °C.
handbook, halfpage
600
MGP470
VCB = 45 V 10 V
handbook, halfpage
300
MGP471
fT (MHz) 400
Cc (pF)
200
200
100 typ
0 0 5 -IE (A) 10
0 0 25 VCB (V) 50
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
August 1986
5
Others parts begin by bl
BL-1 BL-2 BL-3 BL-4 BL-5 BL-6
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