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Part: BLW97/B
Category:
Discrete
-> Transistors
Description: Transistor RF Sot-121
Company:
Datasheet: Download BLW97/B datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW97 HF power transistor
Product specification File under Discrete Semiconductors, SC08a August 1986
Philips Semiconductors
Product specification
HF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange. The transistors are supplied in matched hFE groups.
BLW97
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) PIN CONFIGURATION VCE V 28 IC(ZS) A 0,1 f MHz 1,6 - 28 PL W 175 (PEP) Gp dB > 11,5 dt % > 40 d3 dB < -30 d5 dB < -30
PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage 1
4
1 2 3 4
2
3
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value) VBE = 0 open base Emitter-base voltage (open collector) Collector current average peak value; f > 1 MHz Total d.c. power dissipation at Th = 25°C R.F. power dissipation f > 1 MHz; Th = 25°C Storage temperature Operating junction temperature Ptot(rf) Tstg Tj max. max. IC(AV) ICM Ptot(d.c.) max. max. max. VCESM VCEO VEBO max. max. max.
BLW97
65 V 33 V 4V 15 A 50 A 190 W 230 W 200 °C
-65 to + 150 °C
102 handbook, halfpage
MGP703
handbook, halfpage
350
MGP704
IC (A)
Ptot (W) 250
10
Th = 70 °C
Tmb = 25 °C
150
1
1
10
VCE (V)
102
50 0 40 80 Th (°C) 120
I Continuous d.c. operation II Continuous r.f. operation (f > 1 Mhz). III Short-time operation during mismatch; (f > 1 MHz).
Fig.2 D.C. SOAR.
Fig.3
Power/temperature derating curves.
THERMAL RESISTANCE (dissipation = 120 W; Th = 25 °C i.e. Tmb = 49 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(rf) Rth mb-h = = 0,48 K/W 0,20 K/W Rth j-mb(dc) = 0,63 K/W
August 1986
3
Philips Semiconductors
Product specification
HF power transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 50 mA IC = 100 mA; open base Emitter-base breakdown voltage IE = 20 mA; open collector Collector cut-off current VCE = 33 V; VBE = 0 Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) IC = 10 A; VCE = 5 V D.C. current gain ratio of matched IC = 10 A; VCE = 5 V Collector-emitter saturation IC = 25 A; IB = 5 A Transition frequency at f = 100 MHz(2) -IE = 10 A; VCB = 28 V -IE = 20 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 28 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp = 500 µs. 2. Measured under pulse conditions: tp = 300 µs; = 0,02. Cre Ccf typ. typ. Cc typ. fT fT typ. typ. voltage(1) VCEsat typ. devices(1) hFE1/hFE2 > typ. 15 ICES V(BR)CES V(BR)CEO > >
BLW97
65 V 33 V 4V 20 mA 20 mJ 20 mJ 30 to 50 1,2 2,4 V 230 MHz 235 MHz 380 pF 235 pF 4,5 pF
August 1986
4
Philips Semiconductors
Product specification
HF power transistor
BLW97
handbook, halfpage
50
MGP705
handbook, halfpage
260
MGP706
VCE = 28 V hFE
fT (MHz) 220
VCB = 28 V
15 V
40 typ 180 15 V 30 140 typ 5V 20 0 10 20 IC (A) 30 100 0 10 -IE (A) 20 5V
Fig.4 Tj = 25 °C.
Fig.5 Tj = 25 °C; f = 100 MHz; tp = 300 µs.
handbook, halfpage
1000
MGP707
handbook, halfpage
10
MGP708
Cc (pF) 800
IC (A) 1 Th = 70 °C 25 °C
600 10-1 typ
typ 400
200 0 20 VCB (V) 40
10-2 500
900
VBE (mV)
1300
Fig.6 IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.7 VCE = 28 V.
August 1986
5
Others parts begin by bl
BL-1 BL-2 BL-3 BL-4 BL-5 BL-6
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