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Details, datasheet, quote on part number: BU522B
 
 
Part numberBU522B
CategoryDiscrete => Transistors
DescriptionTransistor Darlington To-220
CompanyN.A.
DatasheetDownload BU522B datasheet
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Specifications, Features, Applications

Power Transistor mainly intended for use as ignition circuit output transistor.· Specified minimum sustaining voltage: VCER(sus) 1 A· High S.O.A. capability: VCE 400 V· Low VCE(sat) 2.0 V max. 4 A MAXIMUM RATINGS

7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS

Rating Symbol BU522B Unit Vdc Adc Collector­Emitter Voltage Sust. Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage VCER(sus) VCER VCBO VEBO IC IB Collector Current Continuous Base Current Total Device Dissipation = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 75 0.60 Watts W/_C TJ, Tstg to 150

© Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data

Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector­Emitter Sustaining Voltage (See Figure 2) (IC 1.0 A) See Figure 2 Collector Cutoff Current (Rated VCER, RBE 270 ) Collector Cutoff Current (Rated VCBO, = 0) VCER(sus) ICER 425 Vdc mAdc 1.0 40 ICBO IEBO Emitter Cutoff Current (VEB = 5.0 Vdc, 0) ON CHARACTERISTICS DC Current Gain (IC = 2.5 Adc, VCE = 5 Vdc) hFE 250 Collector­Emitter Saturation Voltage (IC = 4 Adc, = 80 mAdc) Base­Emitter Saturation Voltage (IC = 4 Adc, = 80 mAdc) VCE(sat) VBE(sat) 2 Vdc 2.5 DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 0.3 mAdc, VCE = 5.0 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, = 0.1 MHz) fT MHz pF 7.5 Cob 150

Motorola Bipolar Power Transistor Device Data
VBAT 47 A INDUCTIVE LOAD 300 µH VOLTAGE PROBE (VCER(sus)) CURRENT PROBE (IC)

to be selected that IC reaches 3 Adc before switch­off Case temperature of the power transistor = 25°C

VBAT 47 A INDUCTIVE LOAD 3 mH CURRENT PROBE (IC)
Clamping device characteristics: 20 mA Clamping duration is around 40 µsec

to be selected that IL reaches 5 Adc before switch­off Case temperature of the power transistor: = 25°C.




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