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Details, datasheet, quote on part number:DG212CJ
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Datasheet text preview:
DG211/212
Low-Cost Monolithic Quad SPST CMOS Analog Switches
Features
D D D D
Benefits
D Wide Signal Range D Simple Logic Interface D Reduced Power Consumption
Applications
D D D D Disk Drives Test Equipment Communication Systems Sample-and-Holds
"15-V Analog Signal Range TTL Compatibility Logic Inputs Accept Negative Voltages On-Resistance--rDS(on): 115 W
Description
The DG211 and DG212 are low cost quad single-pole single-throw analog switches for use in general purpose switching applications in communication, instrumentation and process control. These devices differ only in that the digital control logic is inverted (see Truth Table). The use of both p- and n-channel devices minimizes on-resistance variation over the analog signal range. Designed with the Siliconix PLUS-40 CMOS process to combine low power dissipation with a high breakdown voltage rating of 40 V, both switches will handle "15-V input signals with ease, and have a continuous current rating of 20 mA. An epitaxial layer prevents latchup. Both devices feature true bi-directional performance (with no offset voltage) in the on condition, and will block signals to 30 V peak-to-peak in the off condition. For new designs we recommend the silicon-gate DG211B/212B upgrades.
Functional Block Diagram and Pin Configuration
DG211
Dual-In-Line and SOIC IN1 D1 S1 V GND S4 D4 IN4 IN2 D2 S2 V+ VL S3 D3 IN3 0_C to 70_C to 70_C to 85_C 40_C to 85_C 16-Pin Plastic DIP Plastic DIP
Truth Table Logic
0 1
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
DG211
ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V
DG212
OFF ON
Ordering Information Temp Range Package Part Number
DG211CJ DG212CJ DG211DY 16-Pin Narrow SOIC Narrow SOIC DG212DY
Top View
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70039.
Siliconix S-52880--Rev. E, 28-Apr-97
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DG211/212
Absolute Maximum Ratings
V+ to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V VIN to GNDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V, V+ VL to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V, 25 V VS or VD to V+a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0, 40 V VS or VD to Va . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0, 40 V V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V V to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Current, Any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . 30 mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . 70 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes: a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 25_C d. Derate 7.6 mW/_C above 75_C
Specifications
Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current VANALOG rD S ( o n ) IS(off) VS = "14 V VD = #14 V "14 V, #14 ID(off) ID(on) VS = VD = "14 V IS = 1 mA, VD = "10 V Full Room Full Room Full Room Full Room Full 5 100 5 100 5 200 15 115 "0.02 "0.02 "0.15 15 175 250 5 100 5 100 5 200 nA V W
Limits Tempa Minc Typb Maxc Unit
Symbol
V+ = 15 V, V = 15 V VIN = 2.4 V, 0.8 Ve
Digital Control
VIN = 2.4 V IINH VIN = 15 V Input Current Input Voltage Low IINL VIN = 0 V Room Full Room Full Room Full 1 10 1 10 0.0004 0.003 0.0004 1 10
Input Current Input Voltage High
mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Time Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk tON tOFF1 tOFF2 CS(off) CD(off) CON OIRR XTALK VS = 0 V VIN = 5 V f = 1 MHz V, V, MHz VD = VS = 0 V, VIN = 0 V, f = 1 MHz VIN = 5 V, RL = 1 kW CL = 15 pF, VS = 1 VRMS, f = 100 kHz See Switching Time Test Circuit, VS = 2 V Room Room Room Room Room Room Room Room 460 360 450 5 5 16 70 90 dB pF 1000 500 450 ns
2
Siliconix S-52880--Rev. E, 28-Apr-97
DG211/212
Specifications
Conditions Unless Otherwise Specified Parameter Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current I+ I IL VIN = 0 or 5 V Room Room Room 0.35 0.3 0.5 0.48 0.48 1.2 mA
Limits Tempa Minc Typb Maxc Unit
Symbol
V+ = 15 V, V = 15 V VIN = 2.4 V, 0.8 Ve
Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function.
Typical Characteristics
rDS(on) vs. VD and Temperature
300 600 500 400 125_C rDS(on) ( W ) 300 A 200 D 55_C 0 15 100 0 15 E TA = 25_C 10 5 0 5 10 15 10 5 0 5 10 15 C B
rDS(on) vs. VD and Power Supply Voltage
A. B. C. D. E. V+ = 5 V, V = 5 V V+ = 7.5 V, V = 7.5 V V+ = 10 V, V = 10 V V+ = 12 V, V = 12 V V+ = 15 V, V = 15 V
rDS(on) ( W )
200
25_C 100
VD Drain Voltage (V)
VD Drain Voltage (V)
Leakage Currents vs. Temperature
10 V+ = 15 V V = 15 V VL = 5 V 1 60 40 20 I S , I D (nA) I S , I D (pA) ID(on) ID(off) IS(off) 0 20 40 60 80 100 55 35 15 5 25 45 65 85 105 125 15
Leakage Current vs. Analog Voltage
IS(off), ID(off) ID(on) V+ = 15 V, V = 15 V VL = 5 V, TA = 25_C
0.1
10
5
0
5
10
15
Temperature (_C)
VANALOG Analog Voltage (V)
Siliconix S-52880--Rev. E, 28-Apr-97
3
DG211/212
Typical Characteristics
5000
Switching Time vs. Positive Supply Voltage
V = 15 V VL = 5 V TA = 25_C t ON , t OFF (ns) 1000
Switching Time vs. Temperature
V+ = 15 V, V = 15 V VL = 5 V, VS = 2 V RL = 1 kW , CL = 35 pF TA = 25_C
4000 t ON , t OFF (ns)
800
tON tOFF2
3000 tON 2000
600
400 tOFF1 200 0 55
1000 tOFF1 0 0 5 10 15 V+ Positive Supply (V)
35
15
5
25
45
65
85
105
125
Temperature (_C)
Switching Time vs. Negative Supply Voltage
550 V+ = 15 V VL = 5 V TA = 25_C tON Q (pC) 450 70 60 50 40 30 20 10 0 350 tOFF 10 20 300 0 5 10 15 V Negative Supply (V) 30 30 15
Charge Injection vs. Analog Voltage
V+ = 15 V V = 15 V VL = 5 V TA = 25_C
500 t ON , t OFF (ns)
QD
400
QS
10
5
0
5
10
15
VANALOG Analog Voltage (V)
Capacitance vs. VD or VS
f = 1 MHz TA = 25_C
Input Switching Threshold vs. Logic Supply Voltage
7 6 5
24
C S, D (pF)
VT (V)
18 CD(on 12 CD(off) or CS(off) 6
4 3 2 1
0 15
0 10 5 0 5 10 15
0
VD or VS -- Drain or Source Voltage (V)
4
ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ
5 10 15 20 VL Logic Supply (V)
V+ = 15 V V = 15 V TA = 25_C
Siliconix S-52880--Rev. E, 28-Apr-97
DG211/212
Typical Characteristics
Off Isolation vs. Frequency
160 140 120 X TALK (dB) ISO (dB) 100 80 60 40 20 0 100 1k 10 k 100 k 1M 10 M 100 M RL = 1 kW RL = 10 kW RL = 100 kW 20 0 100 1k 10 k 100 k 1M 10 M 100 M RL = 50 W VS = 1 VR M S See Figure 3 160 140 120 100 80 60 40 RL = 1 kW RL = 10 kW RL = 100 kW VS = 1 V R M S See Figure 4 RL = 50 W
Channel-to-Channel Crosstalk vs. Frequency
f Frequency (Hz)
f Frequency (Hz)
Schematic Diagram (Typical Channel)
V+
S VL V + V+ GND INX D
V
Figure 1.
Siliconix S-52880--Rev. E, 28-Apr-97
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