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Part: IL207A

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Datasheet: Download IL207A datasheet     File size : 113 kB

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IL205A/206A/207/208A
SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLER
FEATURES · High Current Transfer Ratio, IF=10 mA, VCE=5 V IL205A, 40­80% IL206A, 63­125% IL207A, 100­200% IL208A, 160­320% · High BVCEO, 70 V · Isolation Test Voltage, 2500 VACRMS · Industry Standard SOIC-8 Surface Mountable Package · Standard Lead Spacing, .05" · Available in Tape and Reel Option--Suffix "T" (Conforms to EIA Standard RS481A) · Compatible with Dual Wave, Fapor Phase and IR Reflow Soldering · Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL205A/206A/207A/208A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL205/ 6/7/8 come in a standard SOIC-8 small outline package for surface mounting which makes them ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 volts gives a higher safety margin compared to the industry standard 30 volts. Maximum Ratings Emitter Peak Reverse Voltage.....6.0 V Continuous Forward Current..60 mA Power Dissipation at 25°C .... 90 mW Derate Linearly from 25°C .... 1.2 mW/°C Detector Collector-Emitter Breakdown Voltage ...... 70 V Emitter-Collector Breakdown Voltage ........ 7 V Collector-Base Breakdown Voltage ......... 70 V Power Dissipation .....150 mW Derate Linearly from 25°C .... 2.0 mW/°C Package Total Package Dissipation at 25°C Ambient (LED + Detector)....240 mW Derate Linearly from 25°C .... 3.3 mW/°C Storage Temperature ..........­55°C to +150°C Operating Temperature .......­55°C to +100°C Soldering Time at 260°C...... 10 sec.
Dimensions in inches (mm) .120±.005 (3.05±.13) .240 (6.10) Pin One ID .192±.005 (4.88±.13) .004 (.10) .008 (.20) .050 (1.27) typ. .021 (.53)
Anode/ Cathode Cathode/ Anode NC NC
C L
.154±.005 (3.91±.13) .016 (.41)
1 2 3 4
8 7 6 5
NC Base Collector Emitter
.015±.002 (.38±.05) .008 (.20)
40°
7° .058±.005 (1.49±.13) .125±.005 (3.18±.13) Lead Coplanarity ±.0015 (.04) max.
5° max. R.010 (.25) max.
.020±.004 (.15±.10) 2 plcs.
Characteristics (TA=25°C)
Sym Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Leakage Current, Collector-Emitter Package DC Current Transfer IL205A IL206A IL207A IL208A DC Current Transfer IL205A IL206A IL207A IL208A Saturation Voltage, Collector-Emitter Isolation Test Voltage Equivalent DC Isolation Voltage Capacitance, Input to Output Resistance, Input to Output Switching Time CIO RIO tON, tOFF CTRDC 40 63 100 100 CTRDC 13 22 34 56 VCEsat VIO 2500 3535 0.5 100 3.0 25 40 60 95 0.4 VACRMS VDC pF G µs IC=2.0 mA, RE=100 , VCE=10 V 80 125 200 320 % % IF=±10 mA, VCE=5 V BVCEO BVECO ICEO 70 7 V V 50 nA IC=100 mA IE=100 µA VCE=10 V VF IR CO 1.3 0.1 25 1.5 100 V µA pF IF=±10 mA VR=6.0 V VR=0 Min. Typ. Max. Unit Condition
10 5
IF=±1 mA, VCE=5 V
IC=2.0 mA, IF=10 mA,
5­1
Figure 1. Forward voltage versus forward current
1.4
Figure 5. Normalized collector-base photocurrent versus LED current
10
N Icb - Normalized Icb
VF - Forward Voltage - V
1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1
Ta = -55°C Ta = 25°C
1
N ormalized to: Vcb = 9.3 V IF = 10 mA Ta = 25 °C
Ta = 85°C
.1
1 10 IF - Forward Current - mA
100
.01 .1
1 10 I F - LED Current - mA
100
Figure 2. Normalized non-saturated and saturated CTRce versus LED current
1.5
NCTRce - Normalized CTRce
I cb - Collector-base Current - µA
1.0
Normalized to: Vce = 10 V IF = 10 mA Ta = 25 °C
Figure 6. Collector-emitter photocurrent versus LED current
10 00 Ta = 25°C 1 00 10 1 .1 .1 1 10 10 0 IF - LED Curr ent - mA V cb = 9.3 V
Vce = 5 V
0.5
Vce = 0.4 V 0.0 .1 1 10 100
IF - LED Current - mA
Figure 3. Collector-emitter current versus LED current
150 Ta = 25°C Vce = 10 V 100
Figure 7. Collector-emitter photocurrent versus LED current
Iceo - Collector-Emitter - nA
Ice - Collector-emitter Current - mA
105 10 4 10 3
50 Vce = 0.4 V 0 .1 1 10 IF - LED Current - mA 100
10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 Ta - Ambient Temperature - °C Vce = 10V TYPICAL
Figure 4. Normalized collector-base photocurrent versus LED current
NIc b - Normalized Icb
100
Figure 8. Base current versus If and HFE
2.0
NHFE(sat) - Normalized Saturated HFE
Nor malized to: Vcb = 9.3 V 10 IF = 1 mA Ta = 25 °C
1 .1 .1 1 10 IF - LED Current - mA 1 00
70°C 25°C 50°C
1.5 1.0
Normalized to: Ib = 20µA Vce = 10 V Ta = 25 °C
Vce = 0.4 V 0.5 0.0 1 10 100 Ib - Base Current - µA 1000
5­2
IL205A/206A/207A/208A
Figure 9. Typical switching characteristics versus base resistance (saturated operation)
100 Input: IF =10mA 50 Pulse width=100 mS Duty cycle=50%
Figure 10. Typical switching times versus load resistance
1000 Input: 500 IF=10 mA Pulse width=100 mS Duty cycle=50% 100 50 10 5 1
Switching time (µs)
Switching time (µS)
T OF
F
TO
FF
10 5
TON
TON
1.0 10K 50K 100K 500K 1M
0.1
0.5 1
5
10
50 100
Base-emitter resistance, RBE ()
Load resistance RL (K)
5­3
IL205A/206A/207A/208A


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