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Part: J308-9-1
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DISCRETE SEMICONDUCTORS
DATA SHEET
J308; J309; J310 N-channel silicon field-effect transistors
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
FEATURES · Low noise · Interchangeability of drain and source connections · High gain. APPLICATIONS · AM input stage in car radios · UHF/VHF amplifiers, oscillators and mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J308 J309 J310 IDSS drain current J308 J309 J310 Ptot yfs total power dissipation forward transfer admittance up to Tamb = 50 °C VDS = 10 V; ID = 10 mA VGS = 0; VDS = 10 V VDS = 10 V; ID = 1 µA CONDITIONS
handbook, halfpage 2
J308; J309; J310
PINNING - TO-92 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION
1
3 g
MAM197
d s
Fig.1 Simplified outline and symbol.
MIN. - -1 -1 -2 12 12 24 - 10
MAX. ±25 -6.5 -4 -6.5 60 30 60 400 -
UNIT V V V V mA mA mA mW mS
1996 Jul 30
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 50 °C open drain open source CONDITIONS - - - - - -65 -
J308; J309; J310
MIN.
MAX. ±25 -25 -25 50 400 150 150 V V V
UNIT
mA mW °C °C
handbook, halfpage
500
MCD212
(Ptot mW)
400
300
200
100
0 0 50 100 Tamb (oC) 150
Fig.2 Power derating curve.
1996 Jul 30
3
Others parts begin by j3
J3-1
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