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Details, datasheet, quote on part number:KM110B/2
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
KM110B/2 Magnetic field sensor
Preliminary specification File under Discrete Semiconductors, SC17 November 1994
Philips Semiconductors
Philips Semiconductors
Preliminary specification
Magnetic field sensor
DESCRIPTION The KM110B/2 is a sensitive magnetic field sensor, employing the magnetoresistive effect in thin-film permalloy. A Ferroxdure FXD100 magnet mounted on the back of the sensor package provides an auxiliary field of 3.6 kA/m in the x-direction of the sensor. Typical applications for the KM110B/2 are current measurement, linear position measurement, rotational speed detection of magnetic pole wheels as well as magnetic field measurement. The sensor can be operated at any frequency between DC and 1 MHz. PINNING PIN 1 2 3 4 SYMBOL +VO GND -VO +VCC DESCRIPTION output voltage ground output voltage supply voltage
Marking: KMZ10B PHDxx. x
KM110B/2
y
MLB874
1
23
4
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL VCC Tbridge Hy S Rbridge Voffset PARAMETER DC supply voltage bridge operating temperature magnetic field strength sensitivity bridge resistance offset voltage - -40 -2.2 - 1.6 -0.5 MIN. 5 - - 3.6 2.1 - TYP. - 150 +2.2 - 2.6 +0.5 MAX. V °C kA/m mV / V ---------------kA / m k mV/V UNIT
CIRCUIT DIAGRAM
MLB875
handbook, full pagewidth
4 VCC
3 VO
2 GND
1 +VO
Fig.2 Simplified circuit diagram.
November 1994
2
Philips Semiconductors
Preliminary specification
Magnetic field sensor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge Note 1. Maximum operating temperature of the thin-film permalloy. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient 180 VALUE PARAMETER DC supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 130 °C; see Fig.5 note 1 CONDITIONS - - -40 -40 MIN. 12 120 +150 +150 MAX.
KM110B/2
UNIT V mW °C °C
UNIT K/W
CHARACTERISTICS Tamb = 25 °C; VCC = 5 V unless otherwise specified. SYMBOL Hy S TCVO PARAMETER magnetic field strength sensitivity temperature coefficient of output voltage note 1 open circuit; notes 2 and 3 VCC = -5 V; Tamb = -25 to +125 °C ICC = 3 mA; Tamb = -25 to +125 °C Rbridge TCRbridge Voffset TCVoffset FL bridge resistance temperature coefficient of bridge resistance offset voltage temperature coefficient of offset voltage linearity deviation of output voltage Tbridge = -25 to +125 °C Hy = 0 to ±1 kA/m Hy = 0 to ±1.6 kA/m Hy = 0 to ±2 kA/m FH f hysteresis of output voltage operating frequency note 4 Tbridge = -25 to +125 °C CONDITIONS MIN. -2.2 2.9 - - 1.6 - -0.5 -5 - - - - 0 - 3.6. -0.4 -0.1 - 0.3 - ±1.5 - - - - - TYP. MAX. +2.2 4.4 - - 2.6 - +0.5 5 0.5 1.7 2.0 0.5 1 UNIT kA/m mV / V ---------------kA / m %/K %/K k %/K mV/V (µV/V)/K %FS %FS %FS %FS MHz
November 1994
3
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