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Part: M22100F1
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Datasheet: Download M22100F1 datasheet File size : 54 kB
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M22100
4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY
. . . . . . . .
LOW ON RESISTANCE 75 TYP. AT VDD = 12 V "BUILT-IN" CONTROL LATCHES LARGE ANALOG SIGNAL CAPABILITY ± VDD/2 TRANSMITS SIGNALS UP TO 10 MHz MATCHED SWITCH CHARACTERISTICS RON = 18 TYP. AT VDD VSS = 12 V. HIGH LINEARITY : 0.5 % DISTORTION (typ.) AT f = 1 KHz, VIN = 5 V PEAK TO PEAK, VDD VSS = 10 V, RL = 10 K STANDARD COS/MOS NOISE IMMUNITY 100 % TESTED FOR QUIESCENT CURRENT
Therefore, all switches must be turned off by putting the strobe high and data-in-low, and then addressing all switches in succession.
EY (Plastic Package)
F (Ceramic Package)
O RD E R CO D E S : M 2210 0 B 1 M 221 00 F 1
D ESC R I PT I O N The M22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line-to-16-line decoder and 16 latch circuits. Any one of the sixteen transmission gates (crosspoints) can be selected by applying the appropriate four line address. The selected transmission gate can be turned on or off by applying a logical one or zero, respectively, to the data input and strobing the strobe input to a logical one. Any number of the transmission gates can be ON simultaneously. When the required operating power is applied to the 22100, the states of the 16 switches are indeterminate.
P I N C O N N EC T I O N S
F U N CT I O N A L D I A G R A M
T R U T H T AB L E
Address A 0 1 0 1 0 1 0 1 B 0 0 1 1 0 0 1 1 C 0 0 0 0 1 1 1 1 D 0 0 0 0 0 0 0 0 X1 Y1 X2 Y1 X3 Y1 X4 Y1 X1 Y2 X2 Y2 X3 Y2 X4 Y2 Select A 0 1 0 1 0 1 0 1 Address B 0 0 1 1 0 0 1 1 C 0 0 0 0 1 1 1 1 D 1 1 1 1 1 1 1 1 X1 Y3 X2 Y3 X3 Y3 X4 Y3 X1 Y4 X2 Y4 X3 Y4 X4 Y4 Select
September 1988
1/13
M 22 10 0
ABSOLUTE M A XI M U M R A T I N G
Symbol VDD * Vi II Ptot Parameter Supply Voltage: Ceramic Types Plastic Types Input Voltage DC Input Current (any one input) Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range Operating Temperature: Ceramic Types Plastic Types Storage Temperature Value -0.5 to +20 -0.5 to +18 -0.5 to VDD + 0.5 ± 10 200 100 -55 to +125 -40 to +85 -65 to +150 Unit V V V mA mW mW
o o o
Top Tstg
C C C
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSS pin voltage.
R EC O M M EN D ED O PE R A T I N G C O N D I T I O N S
Symbol VDD VI Top Parameter Supply Voltage: Ceramic Types Plastic Types Input Voltage Operating Temperature: Ceramic Types Plastic Types Value 3 to 18 3 to 15 0 to VDD -55 to +125 -40 to +85 Unit V V V
o o
C C
LO G I C DI AG RAM
2/13
M 2 2 1 00
STATIC E L E C T RI C A L C H A R A C T E R I S T I C S (ov e r rec o m m end ed o p era t i n g c o ndi t i o ns )
Test Conditios Symbol Parameter VI (V) VDD (V) 5 10 15 20 5 B1 RON On Resistance 10 15 5 F1 Any Switch 10 12 15 B1 VIS = 0 to VDD 5 10 12 ON Resistance RON (Between any two channels) 15 5 10 12 15 All Switch OFF 0/18 0/15 18 15 ±0.1 ±0.3 450 135 100 70 1000 145 110 75 TLOW * Min. Max. Value 25 oC Min. Typ. Max. 0.04 0.04 0.04 0.08 0.04 0.04 0.04 225 85 75 65 225 85 75 65 35 20 18 15 ±10-3 ±0.1· ±10
-3
THIGH * Min. Max. 150 300 600 3000 150 300 600 1625 230 175 125 1440 205 155 110
Unit
CROSSPOINT IL Quiescent Supply Current F1 5 10 20 100 20 40 80 1250 180 135 95 1250 180 135 95
µA
OFF Channel Leakage Current CONTROL V IL Input Low Voltage VIH Input High Voltage Input Current
F1 B1
±1 ±1
µA
±0.3
OFF Switch IL < 0.2 µA ON Switch see RON Characteristics F1 B1 Any Control Input Any Input 0/18 0/15
5 10 15 5 10 15 18 15 3.5 7 11
1.5 3 4 3.5 7 11 ±0.1 ±0.3
1.5 3 4 3.5 7 11 ±10-5 ±0.1· ±10 5
-5
1.5 3 4 V ±1 ±1 V
II CI
±0.3 7.5
µA pF
Input Capacitance
· Determined by minimum feasible leakage measurement for automatic testing * TLOW = -55 oC for HCC device: -40 oC for HCF device. * THIGH = +125 oC for HCC device: +85 oC for HCF device. The Noise Margin for both "1" and "0" level is: 1V min. with VDD = 5 V, 2 V min. with VDD = 10 V, 2.5 V min. with VDD = 15 V
3/13
Others parts begin by m2
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