|Datasheet||Download M28F102-100X datasheet
5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES OTP COMPATIBLE PACKAGES and PINOUT INTEGRATED ERASE/PROGRAM-STOP TIMER 20 YEARS DATA RETENTION Defectivity below 1ppm/year ELECTRONIC SIGNATURE Manufacturer Code: 0020h Device Code: 0050h
DESCRIPTION The M28F102 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by word. It is organised as 64 Kwords of 16 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The device is offered in PLCC44 and x 14mm) packages.
G W VPP VCC VSS Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Program Supply Voltage GroundComplete data available on DATA-on-DISC CD-ROM or at www.st.com
LCC Pin Connections Ordering Information Scheme For a list of available options or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. Example:Operating Voltage F 5V Speed -150 150ns Power Supplies blank VCC ± 10%
Note: Devices are shipped from the factory with the memory content erased (to FFh).
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