Details, datasheet, quote on part number: M28F201
PartM28F201
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CompanyN.A.
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Features, Applications

Date Description Stand-by Current from 10uA typ. to 5uA typ. November '97 AC Test Circuit and Waveforms - modified PLCC mechanical data and diagram - modified TSOP mechanical data - modified August '98 New ST Logo and Disclaimer - added Globally Revised

± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION ­ Active Current: 15mA typical ­ Stand-by Current: 5µA typical 10,000 PROGRAM/ERASE CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS 20 YEARS DATA RETENTION ­ Defectivity below 1ppm/year ELECTRONIC SIGNATURE ­ Manufacturer Code: 20h ­ Device Code: F4h

DESCRIPTION The M28F201 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by byte. It is organised as 256K bytes by 8 bits. It uses a command register architectureto select the operatingmodes and thus provide a simple microprocessor interface. The device is offered in PLCC32 and x 20mm)packages.Both normal and reverse pinouts are available for the TSOP32 package. Signal Names

Complete data available on DATA-on-DISC CD-ROM or at www.st.com

Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Program Supply Voltage Ground 1/2

Ordering Information Scheme For a list of available options or for further information on any aspect of this device, please contact the STMicroelectronics Sales Officenearest to you.

Note: Devices are shipped from the factory with the memory content erased (to FFh).

 

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