Details, datasheet, quote on part number: M28F411-70XN
PartM28F411-70XN
Category
Description
CompanyN.A.
DatasheetDownload M28F411-70XN datasheet
  

 

Features, Applications

10% SUPPLY VOLTAGE 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS Boot Block (Top location) with hardware write and erase protection Parameter and Main Blocks 100,000 PROGRAM/ERASE CYCLES LOW POWER CONSUMPTION 20 YEARS DATA RETENTION Defectivity below 1ppm/year ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code: F6h DESCRIPTION TheM28F411Flash memory is a non-volatilememory that may be erasedelectrically at theblock level and programmed by byte. The interface is directly compatible with most microprocessors. x 20mm) package is used.

WP RP VPP VCC VSS Address Inputs Data Input / Outputs Chip Enable Output Enable Write Enable Write Protect Reset/Power Down/Boot Block Unlock Program & Erase Supply Voltage Supply Voltage Ground

Complete data available on DATA-on-DISC CD-ROM or at www.st.com

TSOP Pin Connections Ordering Information Scheme For a list of available options or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearestto you.

Temp. Range to 125C Option TR Tape & Reel Packing
Note: Devices are shipped from the factory with the memory content erased (to FFh).

 

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