|Datasheet||Download M28F512-12X datasheet
± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER 20 YEARS DATA RETENTION Defectivity below 1ppm/year ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code: 02h
DESCRIPTION The M28F512 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by byte. It is organised as 64 Kbytes of 8 bits. It uses a command register architectureto select the operatingmodes and thus provides a simple microprocessor interface. The device is offered in PDIP32 and PLCC32 packages. Signal Names
G W VPP VCC VSS Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Program Supply Voltage GroundComplete data available on DATA-on-DISC CD-ROM or at www.st.com
DIP Pin Connections Ordering Information Scheme For a list of available options or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearestto you.Operating Voltage F 5V Speed -20 200ns Power Supplies blank VCC 10% X VCC ± 5% Package
Note: Device are shipped from the factory with the memory content erased (to FFh)
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