|Datasheet||Download MJE340-350 datasheet
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The is a silicon epitaxial planar NPN transistor intended for use in medium power linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350.
Symbol Parameter NPN PNP V CEO V EBO ot T stg Tj Collector-Emitter Voltage = 0) Emitt er-Base Voltage (IC = 0) Collector Current Total Power Dissipation at T case o C Storage T emperature Max Operating Junction T emperature Valu Un itELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)
Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current = 0) Test Cond ition mA 300 Min. Typ. Max. µA VDC Current Gain (NPN type) DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
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EPJ9125-F2 : RJ-45 Filter Port Jacks 10/100Base-T. Space Saving RJ-45 Connectors Surface Mount Package UL94V-0 rated high temp thermoplastic housing Contact plating : 15µ inch gold flashed Complete Bob-Smith termination included OCL (µH Min.) @ 100 KHz, 100m Vrms mA DC Bias 350 Insertion Loss (dB Max.) 1-80 MHz -1.0 100 MHz -1.5 1-30 MHz -20 Return Loss (dB Min.) @60 MHz -15 @80 MHz -12 CMRR (dB Min.).
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PS399ESEE : Precision 8-ch, Diff. 4-ch, 17V Analog Multiplexers. Low On-Resistance (60-ohm typ.) Minimizes Distortion and Error Voltages Low Glitching Reduces Step Errors and Improves Settling Times. Charge Injection: <5pC Split-Supply Operation to +8V) Improved Second Sources for MAX398/MAX399 On-Resistance Matching Between Channels: <6Ohm On-Resistance Flatness: <11-ohm Low Off-Channel Leakage, INO(OFF).
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