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Part: MTD2955E
Category:
Discrete
-> Transistors
Description: Transistor MOSFET Dpak
Company:
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD2955E/D
TM Data Sheet TMOS E-FET.TM Power Field Effect Transistor DPAK for Surface Mount
Designer's
MTD2955E
Motorola Preferred Device
PChannel EnhancementMode Silicon Gate
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching a p p l i c a t i o n s in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number · Replaces the MTD2955 MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage -- Continuous GateSource Voltage -- NonRepetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100°C Drain Current -- Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient, when mounted to minimum recommended pad size Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD D
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM
®
G CASE 369A13, Style 2 DPAK S
Value 60 60 ± 15 ± 25 12 7.0 36 75 0.6 1.75 55 to 150 216 1.67 100 71.4 260
Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ °C/W
TJ, Tstg EAS RJC RJA RJA TL
°C
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value. REV 3
© Motorola TMOS Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1
MTD2955E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 6.0 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 12 Adc) (ID = 6.0 Adc, TJ = 125°C) Forward Transconductance (VDS = 13 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDD = 30 Vdc, ID = 12 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT (VDS = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc) Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (1) (IS = 12 Adc, VGS = 0 Vdc) (IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C) VSD -- -- trr (IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta tb Q RR LD LS -- -- -- -- 2.2 1.8 100 75 25 0.475 3.8 -- -- -- -- -- µC ns Vdc -- -- -- -- -- -- -- -- 9.0 39 17 8.0 16 3.0 6.0 5.0 20 80 35 20 32 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 565 225 45 700 315 100 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 3.0 -- -- 4.8 4.3 3.8 -- mhos -- -- 3.0 0.26 4.0 -- 0.30 Vdc mV/°C Ohm Vdc V(BR)DSS 60 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 85 -- -- Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Figure 14)
Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature.
-- --
4.5 7.5
-- --
nH nH
2
Motorola TMOS Power MOSFET Transistor Device Data
MTD2955E
TYPICAL ELECTRICAL CHARACTERISTICS
24 TJ = 25°C I D , DRAIN CURRENT (AMPS) 9V 18 7V 12 6V 6 VGS = 10 V 8V I D , DRAIN CURRENT (AMPS) 20 16 100°C 12 8 4 0 2 25°C 24 VDS 10 V TJ = 55°C
5V
0
0
1
2
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.9 VGS = 10 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 4 6 8 10 12 14 16 18 20 22 24 ID, DRAIN CURRENT (AMPS) 55°C 25°C TJ = 100°C
0.48 0.44 0.40 0.36 0.32 0.28 0.24 0.20 0 2 4 6 8 10 12 14 16 18 20 22 24 ID, DRAIN CURRENT (AMPS) 15 V VGS = 10 V TJ = 25°C
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 10 V ID = 6 A
1000 VGS = 0 V TJ = 125°C 100°C 25°C
I DSS , LEAKAGE (nA) 25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 125 150
100
10 15
20
25 30 35 40 45 50 55 VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
60
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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