|
Details, datasheet, quote on part number:MV1404
| |
Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MV1403/D
Silicon Hyper-Abrupt Tuning Diodes
These devices are designed with high capacitance and a capacitance change of greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning applications in lower RF frequencies. · High Capacitance: 120250 pF · Large Capacitance Change with Small Bias Change · Guaranteed High Q · Available in Standard Axial Glass Packages
MV1403 MV1404 MV1405
120 250 pF 12 VOLTS HIGH TUNING RATIO VOLTAGEVARIABLE CAPACITANCE DIODES
2 Anode
1 Cathode
2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 10 Vdc, TA = 25°C) Series Inductance (f = 250 MHz, Lead Length 1/16) Case Capacitance (f = 1.0 MHz, Lead Length 1/16) CT, Diode Capacitance VR = 2.0 Vdc, f = 1.0 MHz pF Device MV1403 MV1404 MV1405 Min 140 96 200 Nom 175 120 250 Max 210 144 300 Value 12 250 400 2.67 +125 65 to + 200 Unit Vdc mAdc mW mW/°C °C °C
1
CASE 5102 (DO204AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol V(BR)R IR LS CC Min 12 -- -- -- Typ -- -- 5.0 0.25 Max -- 0.1 -- -- Unit Vdc µAdc nH pF
Q, Figure of Merit VR = 2.0 Vdc, f = 1.0 MHz Min 200 200 200
TR, Tuning Ratio C1/C10 f = 1.0 MHz Min -- -- -- C2/C10 f = 1.0 MHz Min 10 10 10
Motorola SmallSignal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
1
MV1403 MV1404 MV1405
TYPICAL CHARACTERISTICS
C T , DIODE CAPACITANCE (NORMALIZED) 500 C T , DIODE CAPACITANCE (pF) 300 200 MV1405 MV1403 MV1404 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 50 25 0 25 50 75 100 125 150 VR = 2 Vdc f = 1.0 MHz
TA = 25°C f = 1 MHz
100 50 30 20 10 0
1
2
8 5 3 4 6 7 VR, REVERSE VOLTAGE (VOLTS)
9
10
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Diode Capacitance versus Reverse Voltage
1000 VR = 4 Vdc Q, FIGURE OF MERIT VR = 6 Vdc
Figure 2. Diode Capacitance versus Ambient Temperature
VR = 2 Vdc 100
10
1
2
20 5 10 f, FREQUENCY (MHz)
50
100
Figure 3. Figure of Merit versus Frequency
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
MV1403 MV1404 MV1405
PACKAGE DIMENSIONS
B
NOTES: 1. PACKAGE CONTOUR OPTIONAL WITHIN DIA B AND LENGTH A. HEAT SLUGS, IF ANY, SHALL BE INCLUDED WITHIN THIS CYLINDER, BUT SHALL NOT BE SUBJECT TO THE MIN LIMIT OF DIA B. 2. LEAD DIA NOT CONTROLLED IN ZONES F, TO ALLOW FOR FLASH, LEAD FINISH BUILDUP, AND MINOR IRREGULARITIES OTHER THAN HEAT SLUGS. MILLIMETERS MIN MAX 5.84 7.62 2.16 2.72 0.46 0.56 1.27 25.40 38.10 INCHES MIN MAX 0.230 0.300 0.085 0.107 0.018 0.022 0.050 1.000 1.500
D K F A F K
DIM A B D F K
All JEDEC dimensions and notes apply.
CASE 5102 (DO204AA) ISSUE E
Motorola SmallSignal Transistors, FETs and Diodes Device Data
3
|
|
