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Details, datasheet, quote on part number:P0102AA1AA3
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Datasheet text preview:
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P01xxxA/B
SENSITIVE GATE SCR
FEATURES IT(RMS) = 0.8A VDRM = 100V to 400V Low IGT < 1µA max to < 200µA
K G A A G K
DESCRIPTION The P01xxxA/B series of SCRs uses a high performance planar PNPN technology. These parts are intended for general p urpose applications where low gate sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RM S) IT( AV) ITSM Parameter RMS on-state current (180° conduction angle) Mean on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/µs . Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 2mm from case Tl= 55°C Tl= 55°C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 0.8 0.5 8 7 0.24 30 - 40, + 150 - 40, + 125 260 A2s A/µs °C °C Unit A A A TO92 (Plastic) P01xxx A RD26 (Plastic) P01xx xB
I2t dI/ dt Tstg Tj Tl
Symbol VDRM VRRM
J anuary 1995
Parameter A Repetitive peak off-state voltage Tj = 125°C RGK = 1K 100
Voltage B 200 C 300 D 400
Unit V
1/5
P01xxxA/B
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to leads for DC Parameter Value 150 80 Unit °C/W °C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25°C MIN MAX VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IR G =10µA VD=VDRM ITM= 3 x IT( AV) dIG/dt = 0.1A/µs IG = 10mA IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 1.6A tp= 380µs VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR =35V dI/dt=10A /µs tp=100µs dV/dt=10V/µs VD= 67%VD RM RGK = 1 K Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Tj= 125°C Tj= 125°C MAX MIN MIN TYP MAX MAX MAX MAX MAX MIN MAX 25 25 200 1 Sensitivity 09 11 4 25 0.8 0.1 8 0.5 5 6 1.93 1 100 50 200 100 30 15 15 50 18 0.5 5 V V V µs mA mA V µA µA V/µs µs µA Unit IGM = 1 A (tp = 20 µs)
ORDERING INFORMATION
P
SCR PLANAR CURRENT
2/5
01
02
SENSITIVITY
A
A
PACKAGES : A = TO92 B = RD26 VOLTAGE
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P01xxxA/B
F ig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead).
P (W)
P (W)
Tle ad (oC )
1
360
O
1 0. 8
DC R th ( j-a )
o
-4 5
R th (j -l )
0.8 0.6
= 120 = 180
o
-6 5
0. 6 -8 5 0. 4 0. 2 -1 05
Tamb ( C)
o
0.4
= 60
o
= 90
o
0.2
= 30
o
I T( AV)(A)
0 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0
20
40
60
80
10 0
120
-1 25 1 40
F ig.3 : Average on-state current versus lead temp erature.
I T (AV ) (A)
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration.
Zt h(j-a )/Rth (j-a) 1. 00
1 0.8 0.6
DC
0. 10
0.4 0.2
= 180
o
T le ad ( C)
o
tp (s )
0
0
10 20
30
40 50
60 70
80
9 0 1 00 11 0 12 0 1 30
0. 01 1E-3
1E-2
1E-1
1 E+ 0
1 E+ 1
1 E +2 5 E + 2
F ig.5 : Relative variation of gate trigger current and h olding current versus junction temperature.
I gt [T j ] o I gt [Tj = 25 C] I h [T j ] o I h [T j =2 5 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITS M(A)
8 7 6 5
Tj i ni tial = 2 5 C
o
10. 0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih I gt
4 3 2 1
Tj (oC )
Num ber of cycl es 20 40 60 80 10 0 120 14 0
0
0 1
10
1 00
1, 000
3/5
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