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Details, datasheet, quote on part number:P0102BL5AA4
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Datasheet text preview:
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P01xxxL
SENSITIVE GATE SCR
FEATURES IT(RMS) = 0.2A VDRM = 100V to 400V Low IGT < 1µA max to < 200µA
A G K
DESCRIPTION The P01xxxL series o f SCRs uses a high performance planar PNPN technology. These parts are intende d for general purpose high volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol IT( RMS) * IT(AV) * ITSM Parameter RMS on-state current (180° conduction angle) Mean on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/µs . Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Ta= 25°C Ta= 25°C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 0.26 0.17 7.5 7 0.24 30 - 40, + 150 - 40, + 125 260 A2s A/µs °C °C Unit A A A SOT23 (Plastic)
I2t dI/ dt Tstg Tj Tl
* : Mounted on a ceramic substrate of 8 x 10 x 0.7mm.
Symbol VDRM VRRM
J anuary 1995
Parameter A Repetitive peak off-state voltage Tj = 125°C RGK = 1K 100
Voltage B 200 C 300 D 400
Unit V
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P01xxxL
THERMAL RESISTANCES Symbol Rth(j-a) Junction to ambient * Parameter Value 500 Unit °C/W
* : Mounted on a ceramic substrate of 8 x 10 x 0.7mm.
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.02 W PGM = 1 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25°C MIN MAX VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IR G =10µA ITM= VD=VDRM dIG/dt = 0.1A/µs 3 x IT(AV) IG = 10mA Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Tj= 125°C Tj= 125°C MAX MIN MIN TYP MAX MAX MAX MAX MAX MIN MAX 25 200 Sensitivity 09 1 0 .8 0 .1 8 0 .5 5 6 1 .3 1 100 25 200 50 100 11 4 25 15 15 50 V V V µs mA mA V µA µA V/µs µs µA Unit IGM = 0.5 A (tp = 20 µs)
IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 0.4A tp= 380µs VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR =35V dI/dt=10A /µs tp=100µs dV/dt=10V/µs VD= 67%VD RM RGK = 1 K
ORDERING INFORMATION
P
SCR PLANAR CURRENT
2/6
01
02
SENSITIVITY
A
L
PACKAGE : L = SOT23 VOLTAGE
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P01xxxL
F ig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb).
P (W)
P (W)
0.2 5
360
O
0. 25 0. 20
R th (j -a ) DC
0.2 0 0.1 5
= 180
0. 15
o
0.1 0
= 90
= 120
o
o
0. 10 0. 05
0.0 5
= 30
o
= 60
o
I T( AV)(A)
Tamb (oC )
0.0 0 0.00
0 .04
0. 08
0 .1 2
0. 16
0 .2 0
0. 00 0
20
40
60
80
1 00
1 20
1 40
F ig.3 : Average on-state current versus tab temp erature.
I T (AV ) (A)
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration.
Zth (j-a)/Rth(j-a) 1. 00
0. 25 0. 20
= 180
o
0. 15
0. 10
0. 10 0. 05
Tamb ( C )
o
Al um in e su bst r at e: 10 mm*8 mm* 0. 5m m
tp (s )
0. 00
0
1 0 2 0 3 0 4 0 50 6 0 7 0 8 0 9 0 1 0 0 110 1 2 0 1 3 0
0. 01 1E -3
1E-2
1E-1
1 E +0
1E + 1
1 E+ 2
F ig.5 : Relative variation of gate trigger current and h olding current versus junction temperature.
I gt [T j ] o I gt [Tj = 25 C] I h [T j ] o I h [T j =2 5 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITS M(A)
8 7 6 5
Tj i ni tial = 2 5 C
o
10. 0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih I gt
4 3 2 1
Tj (oC )
Num ber of cycl es 20 40 60 80 10 0 120 14 0
0
0 1
10
1 00
1, 000
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