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Part: PBYL10
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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
· Low forward volt drop · Fast switching · Reverse surge capability · High thermal cycling performance · Low thermal resistance
PBYL1025 series
SYMBOL
QUICK REFERENCE DATA VR = 20 V/ 25 V
k 1
a 2
IF(AV) = 10 A VF 0.4 V
GENERAL DESCRIPTION
Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1025 series is supplied in the SOD59 (TO220AC) conventional leaded package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL10 Tmb 119 °C square wave; = 0.5; Tmb 132 °C square wave; = 0.5; Tmb 132 °C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 °C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 20 20 20 20 10 20 135 150 1 150 175 MAX. 25 25 25 25 UNIT V V V A A A A A °C °C
IRRM Tj Tstg
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS
PBYL1025 series
MIN. -
TYP. MAX. UNIT 60 3 K/W K/W
in free air
-
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 10 A; Tj = 150°C IF = 10 A; Tj = 125°C IF = 20 A; Tj = 125°C IF = 20 A VR = VRWM VR = VRWM; Tj = 100°C VR = 5 V; f = 1 MHz, Tj = 25°C to 125°C MIN. TYP. MAX. UNIT 0.33 0.39 0.54 0.57 0.2 15 580 0.4 0.45 0.61 0.64 5 30 V V V V mA mA pF
IR Cd
Reverse current Junction capacitance
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYL1025 series
10 8 6
Forward dissipation, PF (W) Vo = 0.29 V Rs = 0.016 Ohms
PBYL1025
Tmb(max) / C
120 126 132
100mA
Reverse current, IR (A) 125 C
PBYR725D
D = 1.0 0.5 0.2 0.1
10mA 100 C 1mA 75 C 50 C
4
I tp D= tp T
138
100uA Tj = 25 C
2 0
T t
144 150 15
10uA
0
5 10 Average forward current, IF(AV) (A)
1uA
0
5
10 15 Reverse voltage, VR (V)
20
25
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj
8 7 6 5 4 3 2 1 0
Forward dissipation, PF (W) Vo = 0.29 V Rs = 0.016 Ohms
PBYL1025
Tmb(max) / C
126
10000
Junction capacitance, Cd (pF)
PBYR725D
a = 1.57 4 2.8 2.2 1.9
132
138
1000
144
0
2
4 6 8 Average forward current, IF(AV) (A)
150 10
100
1
10 Reverse voltage, VR (V)
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
Forward current, IF (A) Tj = 25 C Tj = 125 C typ 10 max PBYR725D
Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25°C to 125 °C.
Transient thermal impedance, Zth j-mb (K/W)
15
10
1
0.1
5
0.01
P D tp D=
tp T t
0
0
0.2
0.4 0.6 Forward voltage, VR (V)
0.8
1
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
March 1998
3
Rev 1.000
Others parts begin by pb
PB-1 PB-2 PB-3 PB-4 PB-5 PB-6 PB-7
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