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Details, datasheet, quote on part number:PBYL2025/B
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Datasheet text preview:
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
· Low forward volt drop · Fast switching · Reverse surge capability · High thermal cycling performance · Low thermal resistance
PBYL2025 series
SYMBOL
QUICK REFERENCE DATA VR = 20 V/ 25 V
k 1
a 2
IF(AV) = 20 A VF 0.43 V
GENERAL DESCRIPTION
Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2025 series is supplied in the SOD59 (TO220AC) conventional leaded package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL20 Tmb 120 °C square wave; = 0.5; Tmb 131 °C square wave; = 0.5; Tmb 131 °C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 °C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 20 20 20 20 20 40 180 200 2 150 175 MAX. 25 25 25 25 UNIT V V V A A A A A °C °C
IRRM Tj Tstg
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS
PBYL2025 series
MIN. -
TYP. MAX. UNIT 60 1.5 K/W K/W
in free air
-
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 20 A; Tj = 150°C IF = 20 A; Tj = 125°C IF = 40 A; Tj = 125°C IF = 40 A VR = VRWM VR = VRWM; Tj = 100°C VR = 5 V; f = 1 MHz, Tj = 25°C to 125°C MIN. TYP. MAX. UNIT 0.36 0.39 0.55 0.59 0.4 30 1230 0.43 0.45 0.62 0.65 10 60 V V V V mA mA pF
IR Cd
Reverse current Junction capacitance
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYL2025 series
15
Forward dissipation, PF (W)
Vo = 0.27 V Rs = 0.00875 Ohms
PBYL2025 0.5
Tmb(max) / C 127.5 D = 1.0 135
1A 100mA
IR / A 150 C 125 C
PBYR1625
0.2 10 0.1
10mA 100 C 1mA 75 C 50 C
5
I
tp
tp 142.5 D= T t
100uA Tj = 25 C 10uA
T
0
0
5
10 15 20 25 Average forward current, IF(AV) (A)
150 30
1uA 0 5 10 VR / V 15 20 25
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj
15
Forward dissipation, PF (W)
Vo = 0.270 V Rs = 0.00875 Ohms
PBYL2025
Tmb(max) / C 127.5 a = 1.57 1.9 135
10000
Cd / pF
PBYR1625
10
4
2.8
2.2
1000
5
142.5
0
0
5 10 15 Average forward current, IF(AV) (A)
150 20
100
1
10 VR / V
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
PBYR1625
Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25°C to 125 °C.
Transient thermal impedance, Zth j-mb (K/W)
50
IF / A Tj = 25 C Tj = 125 C
10
40 typ 30 max
1
0.1
20
0.01
10
P D
tp
D=
tp T t
0
0
0.2
0.4 VF / V
0.6
0.8
1
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
March 1998
3
Rev 1.000
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