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Part: PHB36N06E
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Philips Semiconductors
Product specification
PowerMOS transistor
PHB36N06E
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 60 41 125 175 38 UNIT V A W °C m
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 k Tmb = 25 °C Tmb = 100 °C Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 60 60 30 41 29 164 125 175 175 UNIT V V V A A A W °C °C
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 1.2 UNIT K/W K/W
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHB36N06E
STATIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Tj = 25 °C VDS = 60 V; VGS = 0 V; Tj = 125 °C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 20 A MIN. 60 2.1 TYP. 3.0 1 0.1 10 30 MAX. 4.0 10 1.0 100 38 UNIT V V µA mA nA m
DYNAMIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 20 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad MIN. 7 TYP. 14 900 420 160 15 55 75 60 2.5 7.5 MAX. 1600 600 275 30 90 125 100 UNIT S pF pF pF ns ns ns ns nH nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 °C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 41 A ; VGS = 0 V IF = 41 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V MIN. TYP. 0.95 60 0.30 MAX. 41 164 2.0 UNIT A A V ns µC
AVALANCHE LIMITING VALUE
Tmb = 25 °C unless otherwise specified SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 41 A ; VDD 25 V ; VGS = 10 V ; RGS = 50 MIN. TYP. MAX. 100 UNIT mJ
August 1996
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHB36N06E
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
10
Zth(j-mb) K/W
BUK464-60H
D= 1 0.5 0.2 0.1 0.05 0.02 0.01 0
P D tp D= tp T t
0.1
0
20
40
60
80 100 Tmb / C
120
140
0.001 1E-07
T
1E-05
1E-03 tp / sec
1E-01
1E+01
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 °C = f(Tmb)
ID% Normalised Current Derating
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
ID / A 20 15 10 BUK474-60H VGS / V = 9
120 110 100 90 80 70 60 50 40 30 20 10 0
80 70 60
8 50 40 30 20 10 6 5 0 2 4 VDS / V 6 8 10 7
0
20
40
60
80 Tmb / C
100
120
140
0
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 °C = f(Tmb); conditions: VGS 10 V
ID / A
Fig.5. Typical output characteristics, Tj = 25 °C. ID = f(VDS); parameter VGS
RDS(ON) / Ohm 5 6 7 8 BUK474-60H VGS / V = 9
1000
BUK464-60H
0.2
100
RD
S
(O
N)
=
VD
S
/ID
tp = 10 us 100 us 1 ms DC 10 ms 100 ms
0.15
0.1
10
0.05 10 20 0
1 1 10 VDS / V 100 1000
0
10
20
30
40 ID / A
50
60
70
80
Fig.3. Safe operating area. Tmb = 25 °C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 °C. RDS(ON) = f(ID); parameter VGS
August 1996
3
Rev 1.000
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