|
Details, datasheet, quote on part number:PMBD2837
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD2837; PMBD2838 High-speed double diodes
Product specification Supersedes data of April 1996 1996 Sep 18
Philips Semiconductors
Product specification
High-speed double diodes
FEATURES · Small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 30 V and 50 V respectively · Repetitive peak reverse voltage: max. 35 V and 75 V respectively · Repetitive peak forward current: max. 450 mA.
handbook, 4 columns
PMBD2837; PMBD2838
PINNING MARKING CODE pA5 pA6 PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common cathode
MARKING TYPE NUMBER PMBD2837 PMBD2838
2
1
APPLICATIONS · High-speed switching in e.g. surface mounted circuits. DESCRIPTION The PMD2837, PMD2838 consist of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in small plastic SMD SOT23 packages.
Top view
2 3 3
MAM108
1
Fig.1 Simplified outline (SOT23) and symbol.
1996 Sep 18
2
Philips Semiconductors
Product specification
High-speed double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM repetitive peak reverse voltage PMBD2837 PMBD2838 VR continuous reverse voltage PMBD2837 PMBD2838 IF continuous forward current PARAMETER CONDITIONS
PMBD2837; PMBD2838
MIN.
MAX.
UNIT
- - - - single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 - -
35 75 30 50 215 125 450
V V V V mA mA mA
IFRM IFSM
repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s - - - - -65 -
4 1 0.5 250 +150 150
A A A mW °C °C
Ptot Tstg Tj Note
total power dissipation storage temperature junction temperature
Tamb = 25 °C; note 1
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 18
3
|
|
