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Details, datasheet, quote on part number:PVA3054
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Datasheet text preview:
Data Sheet No. PD10030E
Series PVA30
Microelectronic Power IC
BOSFET® Photovoltaic Relay
Single-Pole, 40mA, 0-300V AC/DC
General Description
The Photovoltaic AC Relay (PVA) is a single-pole, normally o p e n solid state replacement for electro-mechanical r e l a y s used for general purpose switching of analog s i g nals. It utilizes as an output switch a unique bidirectional (AC or DC) MOSFET power IC termed a BOSFET. The BOSFET is controlled by a photovoltaic generator of novel c o n s t r u c t i o n , which is energized by radiation from a d i electrically isolated light emitting diode (LED). The PVA30 series combines very low solid state output capacitance, very high off-state resistance and very fast r e s p o n s e . These Photovoltaic Relays are designed specifically to accurately switch low-level signals in highperformance instrumentation systems. The PVA overcomes the limitations of both conventional and reed electromechanical relays by offering the solid state advantages of long life, high operating speed, low pic k-up power, bounce-free operation, low thermal voltages and miniaturization. These advantages allow product improvement and design innovations in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition. The PVA30 series can switch analog signals from thermocouple level to 300 volts peak AC or DC polarity. Signal frequencies into the RF range are easily controlled and switching rates up to 25kHz are achievable. The extremely small thermally generated offset voltages allow increased measurement accuracies. The critical outp u t semiconductors are completely shielded from the i n f r a - r e d radiation of the input LED. Therefore, photoc u r rents in the output BOSFET are nonexistent and there is not an output offset resulting from radiation from the input LED drive. Unique silicon technology developed by International Rectifier forms the heart of the PVA. The monolithic BOSFET contains a bidirectional N-channel power MOSFET output structure. In addition, this power IC chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip utilizes both bipolar and MOS techn o l o g y to form NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors. The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this technique results in the very fast response of the PVA microelectronic power IC relay. This advanced semiconductor technology has created a radically new control device. Designers can now develop switching systems to new standards of electrical performance and mechanical compactness.
Features
BOSFET Power IC 1010 Operations 25µsec Operating Time Low Output Capacitance 0.2µVolt Thermal Offset Offset Independent of Input Drive 3 milliwatts Pick-Up Power 1000V/µsec dv/dt Bounce-Free 8-pin DIP Package -40°C to 85°C UL recognized
s s s s s s s s s s s s
Part Identification
Part Number P VA 3054 0 300V P VA 3055 5 mA 1011 Ohms Operating Voltage (AC/DC) Sensitivity Off-State Resistance 1010 Ohms
(BOSFET is a trademark of International Rectifier)
Series PVA30
Electrical Specifications (-40°C TA +85°C unless otherwise specified) INPUT CHARACTERISTICS
Minimum Control Current (see figure 1) For 40mA Continuous Load Current For 22mA Continuous Load Current Maximum Control Current for Off-State Resistance at 25°C Control Current Range (Caution: current limit input LED. See figure 6) Maximum Reverse Voltage
PVA3054
5.0 5.0 10
PVA3055
Units
DC mA@40°C mA@60°C µA(DC) mA(DC) V(DC)
2.0 to 25 7.0
OUTPUT CHARACTERISTICS
Operating Voltage Range Maxiumum Load Current 40°C (see figure 1) Response Time @25°C (see figures 7 and 8) Maximum T(on) @ 12mA Control, 20 mA Load, 100 VDC Maximum T(off) @ 12mA Control, 20 mA Load, 100 VDC Max. On-state Resistance 25°C (Pulsed) (fig. 4) 10 mA Load, 5mA Control Minimum Off-state Resistance 25°C @ 240 VDC Maximum Off-state Leakage 25°C @ 5.0 VDC (see figure 5) Maximum Thermal Offset Voltage @ 5.0mA Control VO(OS) Minimum Off-State dv/dt Maximum Output Capacitance (see figure 9)
PVA3054
40
PVA3055
Units
V(PEAK) mA(DC)
0 to ± 300
25 15 160 10
10
µs µs 10
11
nA µvolts V/µs pF @ 40VDC
-- 0.2 1000 3.0
0.05
GENERAL CHARACTERISTICS (PVA3054 and PVA3055)
Dielectric Strength: Input-Output Insulation Resistance: Input-Output @ 90V DC Maximum Capacitance: Input-Output Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.) Ambient Temperature Range: Operating Storage 2500 1012 @ 25°C - 50% RH 1.0 +260 -40 to +85 -40 to +100
Units
V RMS pF °C
2
Series PVA30
Max. Load Current (mA)
Offset Voltage (µVolts)
Ambient Temperature (°C) Figure 1. Current Derating Curves
Input control Current IF (mA) Figure 2. Offset Voltage
RDD(on) (Ohms)
Ambient Temperature (°C) Figure 3.Typical On Characteristics Figure 4. Typical On-Resistance
3
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