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Details, datasheet, quote on part number:Q62702-P1604
 
 
Part:Q62702-P1604
Category:Discrete => Diodes & Rectifiers
Description:Photodiode IR Filtered
Company:
Datasheet:Download Q62702-P1604 datasheet   File size : 44 kB
Request For quote:  Find where to buy Q62702-P1604
 



Datasheet text preview:
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter NEW: in SMT and as Reverse Gullwing
5.4 4.9 4.5 4.3
BPW 34 F BPW 34 FS BPW 34 FS (E9087)
feo06075
0.6 0.4
1.2 0.7
0.8 0.6
Cathode marking 4.0 3.7
Chip position
0.6 0.4 0.8 0.6
0.5 0.3
0.35 0.2
0.6 0.4
0 ... 5° 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm
GEO06643
3.5 3.0
0.6 0.4 2.2 1.9
BPW 34 F
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet für Anwendungen bei 950 nm q kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher Packungsdichte q BPW 34 FS/(E9087); geeignet für Vapor-Phase Löten und IR-Reflow Löten Anwendungen
q IR-Fernsteuerung von Fernseh- und
1.8 1.4
Approx. weight 0.1 g
Features q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 FS/(E9087); suitable for vaporphase and IR-reflow soldering Applications q IR remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment q Photointerrupters
Rundfunkgeräten, Videorecordern, Gerätefernsteuerungen q Lichtschranken für Gleich- und Wechsellichtbetrieb
Semiconductor Group
1
1998-08-27
BPW 34 F, BPW 34 FS BPW 34 FS (E9087)
Chip position
0...0.1 1.2 1.1 0.3
1.1 0.9
0.2 0.1
6.7 6.2 4.5 4.3 1.8 ±0.2
0.9 0.7
4.0 3.7
1.7 1.5
0...5
°
BPW 34 FS
Photosensitive area 2.65 mm x 2.65 mm
Cathode lead
GEO06863
Chip position
0...0.1 1.2 1.1 0.3
1.1 0.9
0.2 0.1
6.7 6.2 4.5 4.3 1.8 ±0.2
0.9 0.7
1.7 1.5
0...5
°
4.0 3.7
BPW 34 FAS (E9087)
Photosensitive area 2.65 mm x 2.65 mm
Cathode lead
GEO06916
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ Type BPW 34 F BPW 34 FS BPW 34 FS (E9087)
Bestellnummer Ordering Code Q62702-P929 Q62702-P1604 Q62702-P1826
Semiconductor Group
2
1998-08-27
feo06916
feo06861
BPW 34 F, BPW 34 FS BPW 34 FS (E9087)
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value ­ 40 ... + 85 32 150 Einheit Unit °C V mW
Top; Tstg VR Ptot
Kennwerte (TA = 25 °C, = 950 nm) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Symbol Symbol Wert Value 50 ( 40) Einheit Unit µA
S
S max
950 780 ... 1100
nm nm
A L×B L×W
7.00 2.65 × 2.65
mm2 mm × mm
± 60 2 ( 30) 0.59 0.77 330 ( 275)
Grad deg. nA A/W Electrons Photon mV
IR S
VO
Semiconductor Group
3
1998-08-27