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Details, datasheet, quote on part number:Q62702F1063
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Datasheet text preview:
BFT 93
PNP Silicon RF Transistor · For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFT 93 X1s Q62702-F1063 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 15 2 35 3 mW 300 150 - 65 ... + 150 - 65 ... + 150 305 °C mA Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA T stg
1)
TS 58 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-12-1996
BFT 93
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 60 -
V nA 50 µA 10 20 -
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO IEBO hFE
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
Semiconductor Group
2
Dec-12-1996
BFT 93
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
4 5.5 0.8 0.28 1.6 -
GHz pF 1.3 dB 2.7 4.6 -
IC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
G ma
IC = 30 mA, VCE = 8 V, ZS = ZSopt Z L = Z Lopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 10 5 11.5 6.5 -
IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-12-1996
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