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Details, datasheet, quote on part number:Q62702F1346
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Datasheet text preview:
BFR 194
PNP Silicon RF Transistor · For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA · Complementary type: BFR 106 (NPN)
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 194 RKs Q62702-F1346 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 3 100 10 mW 700 150 - 65 ... + 150 - 65 ... + 150 110 °C mA Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA T stg
1)
TS 73 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
BFR 194
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 50 -
V nA 100 µA 1 15 -
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO IEBO hFE
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V
Semiconductor Group
2
Dec-13-1996
BFR 194
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
3.5 5 1.47 0.28 4.4 -
GHz pF 2 dB 2.8 4.7 -
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
G ma
IC = 70 mA, VCE = 8 V, ZS = ZSopt Z L = Z Lopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 8 3 10 5.5 -
IC = 70 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 MHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-13-1996
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