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Details, datasheet, quote on part number:Q62702F1432
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Datasheet text preview:
BFG 235
NPN Silicon RF Transistor · For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA · Power amplifiers for DECT and PCN systems · Integrated emitter ballast resistor · fT = 5.5 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 235 BFG235 Q 6 2 7 0 2 - F 1 4 3 2 1=E 2=B 3=E 4=C
Package SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 25 25 2 300 40 mW 2000 150 - 65 ... + 150 - 65 ... + 150 35 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg
1)
TS 80 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
BFG 235
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 120 -
V µA 200 nA 100 µA 2 50 250
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 25 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 200 mA, VCE = 5 V
Semiconductor Group
2
Dec-13-1996
BFG 235
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
4 5.5 2.6 1.5 15 -
GHz pF 3.6 dB 2.7 -
IC = 200 mA, VCE = 8 V, f = 200 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 60 mA, VCE = 8 V, f = 900 MHz Z S = Z Sopt
Power gain
2)
G ma
|S21e|2 6 dBm 40 12 -
IC = 200 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt
Transducer gain
IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50
Third order intercept point
IP3
IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-13-1996
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