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Details, datasheet, quote on part number:Q62702F1501
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Datasheet text preview:
BFP 181
NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA · fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 181 RFs Q62702-F1271 1=C 2=E 3=B 4=E
Package SOT-143
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ... + 150 430 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg
1)
TS 75 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
BFP 181
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 8 V
Semiconductor Group
2
Dec-11-1996
BFP 181
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
6 8 0.21 0.27 0.32 -
GHz pF 0.4 dB 1.45 1.8 -
IC = 10 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
1)
Gm s
IC = 5 mA, VCE = 8 V, ZS = ZSopt Z L = Z Lopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 16.5 11.5 20 16.5 -
IC = 5 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
1) Gms = |S21/S12|
Semiconductor Group
3
Dec-11-1996
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