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Details, datasheet, quote on part number:Q62702F1502
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Datasheet text preview:
BFP 182W
NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA · fT = 8GHz
F = 1.2dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 182W RGs Q62702-F1502 1=E 2=C 3=E 4=B
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 ... + 150 - 65 ... + 150 235 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg
1)
TS 91 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-12-1996
BFP 182W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 10 mA, VCE = 8 V
Semiconductor Group
2
Dec-12-1996
BFP 182W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
6 8 0.3 0.27 0.6 -
GHz pF 0.45 dB 1.2 1.9 -
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
1)
Gm s
21.5 -
IC = 10 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt
Power gain
2)
G ma
|S21e|2 17.5 12 15.5 -
IC = 10 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt
Transducer gain
IC = 10 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-12-1996
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