Details, datasheet, quote on part number: Q62702F1572
CategoryDiscrete => Transistors
DescriptionTransistor R.f Sot363
DatasheetDownload Q62702F1572 datasheet


Features, Applications

NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at collector currents from to 12 mA = 8 GHz

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 481 RFs = C

Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values °C mA Unit V


Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point

TS is measured on the collector lead at the soldering point to the pcb.

Electrical Characteristics = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit

Electrical Characteristics = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit


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2SJ499 : . Any and all SANYO products described or contained herein do not have s that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative.

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CS241250 : Fast Recovery Single Diode Modules 50 Amperes/600-1200 Volts. Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania (724) 925-7272 CS240650, CS241250 Fast Recovery Single Diode Modules 50 Amperes/600-1200 Volts : Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy mounting with other components on common heatsinks. POW-R-BLOKTM.

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