Details, datasheet, quote on part number: Q67060-S6202-A6
CategoryDiscrete => Transistors
DescriptionTransistor ProFET
DatasheetDownload Q67060-S6202-A6 datasheet


Features, Applications


Load dump and reverse battery protection1) Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown Diagnostic feedback Open load detection in ON-state CMOS compatible input Electrostatic discharge (ESD) protection Loss of ground and loss of Vbb protection2) Overvoltage protection Undervoltage and overvoltage shutdown with autorestart and hysteresis

Product Summary VLoad dump 80 Vbb-VOUT Avalanche Clamp 58 Vbb (operation) 4.5... 42 Vbb (reverse) -32 RON 38 IL(SCp) 44 IL(SCr) 35 IL(ISO) 11


C compatible power switch with diagnostic feedback for 12 V and V DC grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays and discrete circuits

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions.

Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads

No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads

Pin Symbol GND IN Vbb ST OUT (Load, L) Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load

Maximum Ratings 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump UA + Vs, 13.5 V RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

chip - case: junction - ambient (free air): SMD version, device on pcb 4):

VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.

Load Switching Capabilities and Characteristics On-state resistance (pin 2 A

Nominal load current (pin to 5) ISO Proposal: VON 85 C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page Tj =-40...+150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: Tj =-40...+150C Slew rate to 30% VOUT, Tj =-40...+150C Slew rate off to 40% VOUT, Tj =-40...+150C

Operating Parameters Operating voltage Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis 6 ) Overvoltage protection Tj =25...+150C: Standby current (pin VIN=0 Tj=150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin VIN=5 V

Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND

At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, VIN>5.5 V


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