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Details, datasheet, quote on part number:QN101
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Datasheet text preview:
QN101 QUALITY NOTE
IMPROVED PASSIVATION FOR OTP MEMORY PRODUCTS
The CMOS OTP Memory products are part of the overall EPROM upgrade program through which the process and products are being upgraded, both for performance, reliability and to reach smaller die sizes. The passivation of the CMOS OTP Memory products manufactured in the E5/0.8 µm upgraded products has been improved. The new passivation is composed of three layers, from bottom to top these are: Undopped silicon glass (USG) of 5000Å Phosphorous silicon glass (PSG 4%) of 8000Å Oxynitride (SiON) of 7000Å MAIN CHARACTERISTICS The main benefits of this new passivation are 1. Simpler architecture than the previous passivation. This results in a lower defectivity and a better control of the layer thicknesses. 2. The USG layer is a very good and stable barrier against humidity and all kinds of possible contamination. The conformaity of this layer to the underlying morphology is better than the oxynitride layer. This results in better step coverage over the reduced lithographic dimensions of the smaller die sizes - for example over the smaller metal pitch. 3. The PSG layer is used to provide a self planarisation effect. 4. The SiON layer deposited over the planarised PSG layer completely seals the die surface. The integrity tests performed at the wafer level and on decapped devices have not revealed any defects. The tables show the results for the 2 Megabit M27C2001 product, made in the CMOS E5/0.8 µm upgrade process technology - with a 10% die size reduction over the original design.
June 1993
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QN101 - QUALITY NOTE
Table 1. M27C2001 - CMOS E5/0.8 micron 10% upgrade, PLCC32 package
Test Procedure Operating Life Test MIL-STD-883 Procedure 1005 Test Conditions 140°C, VCC = 7V, 168 hrs 500 hrs 1000 hrs 150°C, Lots Fail Samp. Note
3 3 3
0 0 0
180 180 180
Retention Bake
1008
168 hrs 500 hrs 1000 hrs
3 3 3
0 0 0
180 180 180
Temperature, Humidity, Bias
CECC 90,000
85°C, RH = 85%, VCC = 5V, 168 hrs 500 hrs 1000 hrs 130°C, RH = 85%, 48 hrs 96 hrs 168 hrs 240 hrs 121°C, 2Atm, 48 hrs 96 hrs 168 hrs 240 hrs
3 3 3
0 0 0
405 405 405
HAST
CECC 90,000
1 1 1 1
0 0 0 0
32 32 32 32
Pressure Pot
3 3 3 3
0 0 0 0
180 180 180 180
Temperature Cycling
1010
-65 to 150°C, 100 cycles 500 cycles Test Condition A1 Test Condition C1
3 3
0 0
405 405
Fine Leak Gross Leak
1014 1014
Note: Passivation 0.5µm USG, 0.8µm PSG, 0.7µm SiON
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QN101 - QUALITY NOTE
Memory Matrix Area - Polished Cross Section
SiON PSG USG
Flat Area - Polished Cross Section
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