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Details, datasheet, quote on part number:QN111
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Datasheet text preview:
QN111 QUALITY NOTE
PRELIMINARY QUALIFICATION INFORMATION for NEW FABRICATION FACILITIES for EPROM
by F. MORANDI
The Product Change Notice MPG/NV/6008 was issued recently to announce the transfer of EPROM production to a new wafer fabrication plant in Phoenix, USA. This is a very modern plant processing 8" wafers in technologies down to 0.35 micron. The EPROM technology running in this plant uses two processes: E5-U35 which is an 0.8 micron process that has been upgraded by 35%, and the E6-DM which is a new 0.6 micron, double metal process. A test vehicle product was chosen for the qualification of each of these processes: The 8Mb M27C801 EPROM for the E5-U35 process The 4Mb M27C4001 EPROM for the E6-DM process The qualification has taken into account three aspects: the intrinsic fabrication facility quality, the characterisation and electrical stability of the products compared to the previous fabrication facility and the reliability tests performed on test lots. INTRINSIC FABRICATION FACILITY QUALITY A well accepted and formalised quality index to compare wafer fabrication plants is the "average defectivity per square centimeter per mask level". This defectivity is derived from the electrical wafer testing yields by applying simple statisatical models. The results for the D0 index show that up at the end of March 1997 the defectivity of the new Phoenix, USA fabrication facility was 10% better than the previously used facility in Agrate, Italy. This is an expected result for this more modern plant. Table 1. Defectivity D0 (Defects/cm2/Mask level)
Fabrication Facility Phoenix, USA. 8" wafers Agrate, Italy. 6" wafers Parameter D0 Total D0 Top Ten Runners Do Total D0 Top Ten Runers Previous Year 1996 0.025 0.025 0.0331 0.0273 Jan. 1997 0.027 0.027 0.043 0.027 Feb. 1997 0.032 0.032 0.0379 0.0262 Mar. 1997 0.030 0.030 0.0327 0.0261
RELIABILITY The process architecture of the products, the process controls, equipment, chemicals and photoresist were unchanged, leading to the expectation of excellent reliability results. In accordance with ST Standard Operating Procedures both test vehicles have been submitted to intensive reliability tests with the very positive result that no defects have currently been found. The reliability tests and results are in Tables 2 to 5. CHARACTERISTICS AND STABILITY OF ELECTRICAL PARAMETERS Reflecting the overall stability of the products' design, a comparison of the main electrical characteristics of both test vehicles in the worst case conditions of supply voltage and/or temperature, does not show any significant variations from the previous fabrication facility. The results are shown in Tables 6 to 9. A complete Qualification Report will be published. For more information please contact your nearest SGS-THOMSON Sales Office.
June 1997 1/8
QN111 - QUALITY NOTE
Table 2. M27C4001 UV EPROM version, FDIP32W package, E6-DM Process, Phoenix USA
Subgroup Test Procedure MIL-STD-883 Procedure Test Conditions Lots 140°C, VCC = 7V, 168 hrs 500 hrs 1000 hrs 2000 hrs 40°C, VCC = 7V, 168 hrs 500 hrs 1000 hrs 2000 hrs 250°C, 168 hrs 500 hrs 1000 hrs 2000 hrs 65 to 140°C, 100 cycles 500 cycles 1000 cycles Results Samp. Fail Note
1
Operating Life Test
1005
3
228 228 228 228
0 0 0 0
2
Operating Life Test
1005
3
108 108 108 108
0 0 0 0
3
Retention Bake
1008
3
300 300 300 300
0 0 0 0
4
Temperature Cycling
1010
2
103 103 103
0 0 0
Table 3. M27C4001 OTP EPROM version, PLCC32 package, E6-DM Process, Phoenix USA
Subgroup Test Procedure MIL-STD-883 Procedure Test Conditions Lots 140°C, VCC = 7V, 168 hrs 500 hrs 1000 hrs 2000 hrs 150°C, 168 hrs 500 hrs 1000 hrs 2000 hrs 85°C, RH = 85%, VCC = 5.5V, 168 hrs 500 hrs 1000 hrs 65 to 150°C, 100 cycles 500 cycles 121°C, 2 Atm, 96 hrs 168 hrs 240 hrs Results Samp. Fail Note
1
Operating Life Test
1005
3
170 170 170 170
0 0 0 0
2
Retention Bake
1008
3
185 185 185 185 180 180 180
0 0 0 0 0 0 0
3
Temperature, Humidity, Bias
CECC 90,000
3
4
Temperature Cycling
1010
3
180 180
0 0
5
Pressure Pot
3
180 180 180
0 0 0
2/8
QN111 - QUALITY NOTE
Table 4. M27C801 UV EPROM version, FDIP32W package, E5-U35 Process, Phoenix USA
Subgroup Test Procedure MIL-STD-883 Procedure Test Conditions Lots 140°C, VCC = 7V, 168 hrs 500 hrs 1000 hrs 2000 hrs 40°C, VCC = 7V, 168 hrs 500 hrs 1000 hrs 2000 hrs 250°C, 168 hrs 500 hrs 1000 hrs 2000 hrs Results Samp. Fail Note
1
Operating Life Test
1005
5
420 420 420 420
0 0 0 0
2
Operating Life Test
1005
2
57 57 57 57
0 0 0 0
3
Retention Bake
1008
6
508 508 508 508
0 0 0 0
Table 5. M27C801 OTP EPROM version, PLCC32 package, E5-U35 Process, Phoenix USA Formal Product Qualification on-going on further lots
Subgroup Test Procedure MIL-STD-883 Procedure Test Conditions Lots 140°C, VCC = 7V, 168 hrs 500 hrs 1000 hrs 150°C, 168 hrs 500 hrs 1000 hrs 85°C, RH = 85%, VCC = 5.5V, 168 hrs 500 hrs 1000 hrs 65 to 150°C, 100 cycles 500 cycles 1000 cycles 121°C, 2 Atm, 96 hrs 168 hrs 240 hrs 336 hrs Results Samp. Fail Note
1
Operating Life Test
1005
1
70 70 70
0 0 0
2
Retention Bake
1008
1
70 70 70
0 0 0
3
Temperature, Humidity, Bias
CECC 90,000
1
60 60 60
0 0 0
4
Temperature Cycling
1010
1
60 60 60
0 0 0
5
Pressure Pot
1
60 60 60 60
0 0 0 0
3/8
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