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Details, datasheet, quote on part number:S2812
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Datasheet text preview:
Contents
Features .. 1 Pin Assignment ...... 1 Block Diagram........ 2 Operation Mode ..... 2 Absolute Maximum Ratings ..... 2 Recommended Operating Conditions..... 2 DC Electrical Characteristics ... 3 Rewriting Times ..... 3 Pin Capacitance..... 3 AC Electrical Characteristics.... 4 Operation ......... 8 Dimensions ...... 9 Ordering Information ..... 10 Characteristics ..... 11
CMOS 16K-bit PARALLEL E2PROM
S-2812A/2817A
The S-2812A and the S-2817A are low power 2K´8-bit parallel 2 E PROMs. The S-2812A features wide operating voltage range, and the S-2817A features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation. n Features
· Access time: 150 ns (VCC=5 V±10%, Ta=0°C to 70°C) · Low power consumption Operating: 30 mA max. (VCC=5 V±10%) Standby: 1 mA max. (VCC=5 V±10%) · Operating voltage range S-2812A S-2817A Read: 1.8 to 5.5 V 5 V±10% W rite: 2.7 to 5.5 V 5 V±10% · W rite inhibition S-2812A: 2.1 V typ. S-2817A: 3.5 V typ. · Data polIing · W ith Ready/Busy pin · Page write for 32 bytes · Rewritings: 105 times · Data retention: 10 years · Program noise immunity · Package: 28-pin DIP/SOP/TSOP · Supply in bare chip is also available
n Pin Assignment
28-pin DIP/SOP R/B NC A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE NC A8 A9 NC OE A10 CE I/O 7 I/O 6 I/O 5 I/O 4 I/O 3
Pin name A0 to A10 I/O0 to I/O7 CE OE WE R/B VCC GND
F unction Address input Data input / output Chip Enable Output Enable W rite Enable Ready/Busy (opendrain output) Power supply voltage Ground (0 V)
28-pin TSOP
OE NC A9 A8 NC WE VCC R/B NC A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2
Figure
Seiko Instruments Inc.
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CMOS 16K-bit PARALLEL E2PROM S-2812A/2817A
n Block Diagram Address buffer & Latch W rite protection Row decoder
A5 to A10
16,384-bit E2PROM Memory array
VCC CE OE WE R/B
High voltage g enerator 32-byte Page register Data polling I / O buffer
Control logic
Timer
A0 to A4 VCC GND
Address buffer & Latch
Column decoder I / O0 to I / O7
Figure 2
n Operation Mode
Table 1 Mode Read W rite W rite inhibition Standby CE L L ´ ´ H OE L H ´ L ´ WE H L H ´ ´ I/O Data output Data input ¾ ¾ High-Z
n Absolute Maximum Ratings
Table Parameter Power supply voltage Input voltage Output voltage Storage temperature under bias Storage temperature Symbol VCC VIN VOUT Tbias Tstg 2 Ratings -0.3 to +7.0 -0.3 to VCC+0.3 -0.3 to VCC -50 to +95 -65 to +150 Unit V V V °C °C
n Recommended Operating Conditions
Table 3 Parameter Power supply voltage High level input voltage Symbol VCC VIH VIL Topr Conditions S-2812A Read W rite Min. 1.8 2 .7 4.5 2 .2 0.8´VCC -0.3 - 0.3 - 0.3 -40 Typ. ¾ ¾ 5 .0 ¾ ¾ ¾ ¾ ¾ ¾ Max. 5.5 5.5 5.5 VCC+0.3 VCC+0.3 0.8 0.4 0.2´VCC 85 Unit V V V V V V V V °C
Low level input voltage Operating temperature
S-2817A VCC=2.7 to 5.5 V VCC=1.8 to 2.7 V VCC=5 V ±10% VCC=2.7 to 4.5 V VCC=1.8 to 2.7 V
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Seiko Instruments Inc.
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