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Details, datasheet, quote on part number:SA600
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Datasheet text preview:
Philips Semiconductors
Product specification
1GHz LNA and mixer
NE/SA600
DESCRIPTION
The NE/SA600 is a combined low noise amplifier (LNA) and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 2dB noise figure at 900MHz with 16dB gain and an IM3 intercept of -10dBm at the input. Input and output impedances are 50 and the gain is stabilized by on-chip compensation to vary less than ±0.5dB over the -40 to +85°C temperature range. The wide-dynamic-range mixer has a 14dB noise figure and IM3 intercept of +6dBm at the input at 900MHz. Mixer input impedance is 50 with an open-collector output. The chip incorporates an option so the LNA can be disabled and replaced by a through connection. The amplifier IM3 intercept increases to +26dBm in this mode; thus, large signals can be handled. The nominal current drawn from a single 5V supply is 13mA and 4.2mA in the LNA thru mode.
PIN CONFIGURATION
D Package
1 2 3 4 5 6 7 14 13 12 11 10 9 8
V CC GNDB RF INA GNDA1 BYPASS GNDLO LOIN
VCCMX IFOUT GNDMX RF INMX GNDA2 RF OUTA ENABLE
FEATURES
mode
SR00082
· Low current consumption: 13mA nominal, 4.2mA in the LNA thru · Excellent noise figure: 2dB for the amplifier and 14dB for the
mixer at 900MHz
Figure 1. Pin Configuration
APPLICATIONS
· Excellent gain stability versus temperature · Switchable overload capability · Amplifier matched to 50 · Mixer input matched to 50 · Oscillator input matched to 50
ORDERING INFORMATION
DESCRIPTION 14-Pin Plastic Small Outline (SO) package (Surface-mount) 14-Pin Plastic Small Outline (SO) package (Surface-mount)
· 900MHz front end for GSM/AMPS/TACS/ hand-held units · RF data links · UHF frequency conversion · Portable radio · Spread spectrum receivers · 900MHz cordless phones
TEMPERATURE RANGE 0 to +70°C -40 to +85°C
ORDER CODE NE600D SA600D
DWG # SOT108-1 SOT108-1
BLOCK DIAGRAM
V CMX C IF OUT GND MX RFINMX GND A2 RFOUTA ENABLE
14
13
12
11
10
9
8
RF GAIN TEMP. COMP. IF LO
AMP POWER DOWN
2 1 LNA
BIAS
1
V CC
2
GND B
3
RF INA
4
GND A1
5
BYPASS
6
GND LO
7
LO IN
SR00083
Figure 2. Block Diagram
1993 Dec 15
47
853-1659 11649
Philips Semiconductors
Product specification
1GHz LNA and mixer
NE/SA600
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC, VCCMX VIN V G PD TJMAX PMAX TSTG Supply voltage1 Voltage applied to any other pin VCC to VCCMX Any GND pin to any other GND pin Power dissipation, TA = 25°C (still air)2 14-Pin Plastic SO Maximum operating junction temperature Maximum power input/output Storage temperature range PARAMETER RATING -0.3 to +6.0 -0.3 to (VCC+0.3) -0.3 to +0.3 -0.3 to +0.3 980 150 +20 65 to +150 UNITS V V V V mW °C dBm °C
NOTE: 1. Transients exceeding 9V on VCC pin may damage product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, JA: 14-Pin SO: JA = 125°C/W 3. CAUTION: The NE/SA600 is built on a BiCMOS process and is sensitive to electrostatic discharge.
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC, VCCMX Supply voltage Operating ambient temperature range NE Grade SA Grade Operating junction temperature NE Grade SA Grade PARAMETER RATING 4.5 to 5.5 0 to +70 -40 to +85 0 to +90 -40 to +105 UNITS V °C °C °C °C
TA
TJ
DC ELECTRICAL CHARACTERISTICS1,2
VCC = VCCMX = +5V, TA = 25°C; Test Figure 1, unless otherwise stated. SYMBOL ICC VT VIH VIL IIL IIH VLNAIN VLNAOU
T
PARAMETER Supply current (Pin 1, 13, 14) current (Pin 1 13 14) Enable logic threshold voltage Logic 1 level: LNA gain mode Logic 0 level: LNA thru mode Enable input current Enable input current LNA input bias voltage LNA output bias voltage LNA bypass bias voltage Mixer RF input bias voltage Mixer LO input bias voltage
TEST CONDITIONS CONDITIONS Enable input high Enable input low
LIMITS MIN 10 3.2 1.12 2.0 0.3 3 11 3.6 1.17 TYP 13.0 4.2 1.27 +3 15 4.8 1.37 MAX 16 5.2 1.42 VCC 0.8 0 0 0.78 1.27 1.05 1.43 3.35 1 1
UNITS mA V V V µA µA V V V V V
Enable = 0.4V Enable = 2.4V Enable input high Enable input high Enable input high
-1 -1
VBY VMXIN VLOIN
NOTE: 1. The ENABLE input must be connected to a valid logic level for proper operation of the NE/SA600. 2. Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
1993 Dec 15
48
Philips Semiconductors
Product specification
1GHz LNA and mixer
NE/SA600
AC ELECTRICAL CHARACTERISTICS1,2
SYMBOL PARAMETER TEST CONDITIONS CONDITIONS LIMITS 3 TYP +3 UNITS
LNA (VCC = VCCMX = +5V, TA = 25°C; Enable = Hi, Test Figure 1, unless otherwise stated.) S21 S21 S21/T S21/T S21/f S12 S11 S22 P-1dB IP3 Amplifier gain Amplifier gain in thru mode Gain temperature sensitivity enabled Gain temperature sensitivity in thru mode Gain frequency variation Amplifier reverse isolation Amplifier input match3 Amplifier output match Amplifier input 1dB gain compression Amp input 3rd-order intercept Amp input 3rd-order intercept (thru mode) Amplifier noise figure NF tON tOFF Amp noise figure w/shunt 15nH inductor at input Amplifier turn-on time Amplifier turn-off time 900MHz Enable = LO, 900MHz 900MHz Enable = LO, 900MHz 800MHz - 1.2GHz 900MHz 900MHz 900MHz 900MHz Test Fig. 2, 900MHz Test Fig. 2, 900MHz, Enable = LO 900MHz 900MHz Enable Lo Hi Enable Hi Lo Coupling = 100pF Coupling = 0.01µF Coupling = 100pF Coupling = 0.01µF 1.9 1.7 47 11 16.8 21.2 11.6 14.9 9.0 16 -7.5 -0.008 -0.014 -0.014 -42 -10 -15 -20 -10 +26 2.2 2.0 30 3 10 1 2.5 2.3 37 9 13.2 18.8 8.6 17.1 6.0 dB dB dB/°C dB/°C dB/MHz dB dB dB dBm dBm dBm dB dB µs ms µs ms
Mixer (VCC = VCCMX = +5V, TA = 25°C, Enable = Hi, fLO = 1GHz @ 0dBm, fRF = 900MHz, fIF = 100MHz, Test Fig. 1, unless otherwise stated) VGC PGC S11RF NFM P-1dB IP3INT IP2INT G RFM-IF GLO-IF GLO-RFM S11LO G LO-RF Mixer voltage conversion gain Mixer power conversion gain Mixer input match Mixer SSB noise figure Mixer input 1dB gain compression Mixer input third order intercept Mixer input second order intercept Mixer RF feedthrough Mixer LO feedthrough Local oscillator to mixer input feedthrough LO input match Local oscillator to RF input feedthrough RL1 = RL2 = 1k RL1 = RL2 = 1k 900MHz Test Fig. 3, 900MHz, fIF = 80MHz 900MHz 900MHz 900MHz 900MHz, CIF = 3pF 900MHz, CIF = 3pF 900MHz 900MHz 900MHz 900MHz 24 9.5 3.05 23 12.2 5.3 +5 +18 10.4 2.6 -20 14 -4 +6 +20 7 -10 -33 20 -46 -39 16 11.3 2.15 17 15.8 2.7 +7 +22 dB dB dB dB dBm dBm dBm dB dB dB dB dB dB
GRFO-RFM Filter feedthrough
LNA + Mixer (VCC=VCCMX=+5V, TA=25°C, Enable=Hi, fLO=1GHz @ 0dBm, fRF = 900MHz, fIF = 100MHz, Test Fig. 1, unless otherwise stated) PGC NF IP3 Overall power conversion gain Overall noise figure Overall input 3rd-order intercept 13.4 3.5 13 dB dB dBm
NOTE: 1. All meausrements include the effects of the NE/SA600 Evaluation Board (see Figure ) unless otherwise noted. Measurement system impedance is 50. 2. Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product. 3. With a shunt 15nH inductor at the input of the LNA, the value of S11 is typically 15dB.
1993 Dec 15
49
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