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Part: STB19N20
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Datasheet: Download STB19N20 datasheet File size : 306 kB
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STB19NB20
N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET
PRELIMINARY DATA T YP E S T B 1 9NB 20
s s s s s s
V DS S 2 00 V
R DS ( o n ) < 0 . 18 0
ID 19 A
TYPICAL RDS(on) = 0.150 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED EXTREMELY HIGH dv/dt CAPABILITY FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advance d family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company's proprietary edge termination s tructure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE R E ABSOLUTE MAXIMUM RATINGS
S ym b o l VD S VD G R V GS ID ID I DM ( · ) Pt o t d v / d t ( 1) Tstg Tj P ar ame t er D r a in - s o u r c e V o lt a g e ( V GS = 0 ) D r a in - g a t e V o lt a g e ( R G S = 2 0 k ) G at e- s our c e V ol t ag e o D r a in C u rr e n t ( co n ti n u o u s ) a t Tc = 2 5 C D r a in C u rr e n t ( co n ti n u o u s ) a t Tc = 1 00 o C D r a in Cu rr e n t ( p u l s e d ) o T ot al Dis s ip at ion a t T c = 2 5 C Der at ing F a c t or P ea k Dio de Re c ov er y v ol t ag e s lope S t o ra g e T e m p e r a t u r e M ax . O per at ing J un c t i on T em pe r at ur e
D2PAK TO-263
(Suffix "T4 ")
INTERNAL SCHEMATIC DIAGRAM
Va lu e 2 00 2 00 ± 30 19 12 76 1 25 1 5. 5 - 65 t o 1 50 1 50
(1) ISD 19A, di/dt 200 A/µs , VDD V(BR)DSS, Tj TJMAX
Un i t V V V A A A W W/oC V / ns o C
o
C
( ·) Pulse width limited by safe operating area
October 1997
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STB19NB20
THERMAL DATA
R t h j - c a se R t h j- a mb R t h c - si n k Tl T h e r m a l R e s is t a n c e J u n c t io n - c a s e M ax 1 62. 5 0.5 3 00
o o o
C/W C/W C/W o C
T h e r m a l R e s is t a n c e J u n c t io n - am bie nt M ax T h e r m a l R e s is t a n c e C a s e - s i n k Ty p M a x im u m L e a d T e m p e r a t u re F o r S old eri ng P ur p os e
AVALANCHE CHARACTERISTICS
S ymb o l I AR E AS P ara met e r A v ala nc h e C ur r e nt , R ep et it i v e o r Not - Re pet it iv e ( pu ls e w id t h li m it e d b y Tj m a x , < 1% ) S i n g l e P u ls e A v a la n c h e E n e r g y ( s t a r ti n g Tj = 2 5 o C , I D = IAR , VDD = 50 V ) M a x V a lu e 19 2 00 Un i t A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
S ymb o l V ( BR ) DSS I DSS I GSS P a ra m e t e r D r a i n - s o u rc e B r eak down V olt age T e st C o n d i t i o n s I D = 25 0 µ A V GS = 0 Mi n. 200 1 10 ± 1 00 T yp . M a x. Un i t V µA µA nA
V D S = M a x R at i ng Z e r o G a t e V o lt a g e D r a i n C u r re n t ( VGS = 0 ) V D S = M a x R at i ng G a t e- body Le ak a ge C u r r e n t (V D S = 0 ) V G S = ± 30 V
T c = 12 5 C
o
ON ()
S ymb o l V GS( t h ) R DS( o n ) ID ( o n ) P a ra m e t e r G a t e T h r es hold V o lt a ge V D S = VG S T e st C o n d i t i o n s ID = 2 5 0 µ A ID = 9 . 5 A 19 Mi n. 3 T yp . 4 0. 1 50 M a x. 5 0 . 1 80 Un i t V A
S t at i c D r ain - s o ur c e O n V G S = 1 0V Re s is t an c e
O n S t a t e D ra i n Cu r r e n t V D S > I D( o n ) x R D S( o n ) ma x VG S = 1 0 V
DYNAMIC
S ymb o l g fs ( ) C iss Coss C rss P a ra m e t e r F o r war d T r ans c ond uc t anc e I n put Ca pac i t an c e O u t pu t C apa c it anc e Re v er s e T r ans f er Ca pa c it an c e T e st C o n d i t i o n s V D S > I D( o n ) x R D S( o n ) ma x V D S = 25 V f = 1 MH z I D = 9. 5 A VG S = 0 Mi n. 3 1000 285 45 1 35 0 38 5 60 T yp . M a x. Un i t S pF pF pF
2/6
STB19NB20
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
S ymb o l td(on) tr Qg Qgs Qgd P a ra m e t e r T u r n- o n T im e Ri s e T im e T o t al G a t e Ch ar g e G a t e- S ou r c e Cha r ge G a t e - D r a in C h a r g e T e st C o n d i t i o n s V D D = 1 00 V I D = 9 . 5 A VG S = 1 0 V R G = 4. 7 ( s ee t es t c ir c uit , f igu r e 3 ) V D D = 1 60 V I D = 1 9 A VG S = 1 0 V Mi n. T yp . 15 15 29 9.5 13 M a x. 20 20 40 Un i t ns ns nC nC nC
SWITCHING OFF
S ymb o l t r ( Vo f f ) tf tc P a ra m e t e r O f f - v o lt ag e Ris e T im e F a ll T i m e Cr os s - ov er T im e T e st C o n d i t i o n s V D D = 1 60 V I D = 1 9 A R G = 4. 7 V GS = 10 V ( s ee t es t c ir c uit , f igu r e 5 ) Mi n. T yp . 10 10 20 M a x. 15 15 30 Un i t ns ns ns
SOURCE DRAIN DIODE
S ymb o l I SD I S D M (· ) V SD ( ) trr Qrr I RR M P a ra m e t e r S o ur c e- dr ain Cu r r e nt S o ur c e- dr ain Cu r r e nt ( pu ls e d) F o r wa r d O n V o lt a g e Re v er s e R ec ov er y Ti me Re v er s e R ec ov er y Ch ar ge Re v er s e R ec ov er y Cu r r en t I SD = 1 9 A VG S = 0 210 1.5 14. 5 I S D = 1 9 A d i / d t = 1 0 0 A /µ s o Tj = 1 5 0 C VD D = 5 0 V ( s ee t es t c ir c uit , f igu r e 5 ) T e st C o n d i t i o n s Mi n. T yp . M a x. 19 76 1. 5 Un i t A A V ns µC A
( ) Pulsed: Pulse duration = 300 µs , duty cycle 1.5 % ( ·) Pulse width limited by safe operating area
3/6
Others parts begin by st
ST-1 ST-2 ST-3 ST-4 ST-5 ST-6 ST-7 ST-8 ST-9 ST-10 ST-11 ST-12 ST-13 ST-14 ST-15 ST-16 ST-17 ST-18 ST-19 ST-20 ST-21 ST-22 ST-23 ST-24 ST-25 ST-26 ST-27 ST-28 ST-29 ST-30 ST-31 ST-32 ST-33 ST-34 ST-35 ST-36 ST-37 ST-38 ST-39 ST-40 ST-41 ST-42 ST-43 ST-44 ST-45 ST-46 ST-47 ST-48 ST-49 ST-50 ST-51 ST-52 ST-53 ST-54 ST-55 ST-56 ST-57 ST-58 ST-59 ST-60 ST-61 ST-62 ST-63 ST-64 ST-65 ST-66 ST-67 ST-68 ST-69 ST-70 ST-71 ST-72 ST-73 ST-74
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