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Part: STPS2045
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Datasheet: Download STPS2045 datasheet File size : 65 kB
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STPS2045CT/CF/CG
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE DESCRIPTION Dual center t ap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters. This device is especially intende d for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) Parameter Repetitive peak reverse voltage Average forward current = 0.5 TO-220AB / D2PAK Per diode Tc = 135 °C Per diode Value 45 10 20 30 180 1 -65 to +150 150 10000 A A A °C °C V/µs
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A2 A1
2 x 10 A 45 V 0.57 V
A1 K A2
A2 A1 K
A2 A1 K
TO-220AB STPS2045CT
K
ISOWATT220AB STPS2045CF
D PAK STPS204 5CG
2
Unit V A
ISOWATT220AB Tc = 120 °C Per device IF(RMS) IFSM IRRM Tstg Tj dV/dt RMS forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage tp = 10 ms Sinusoidal tp = 2 µs F = 1KHz Per diode Per diode Per diode
July 1998 - Ed: 2A
STPS2045CT/CF/CG
THERMAL RESISTANCES Symbol Rth ( j-c) Junction to case Parameter TO-220AB / D2PAK ISOWATT220AB Rth (c) Coupling TO-220AB / D2PAK ISOWATT220AB When the diodes 1 and 2 are used simultaneously: Tj (diode 1) = P (diode1) x RTH (per diode) + P (diode 2) x RTH(C ) Per diode Total Per diode Total Value 2.2 1.3 4.5 3.5 0.3 2.5 °C/W Unit °C/W
STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25°C Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 125°C Tj = 125°C
Pulse test : * tp = 5 m s, < 2 % ** tp = 380 µs, < 2%
Min.
Typ.
Max. 100 15
Unit µA mA V
VR = VRRM
IF = 20 A IF = 20 A IF = 10 A
0.84 0.72 0.57
To evaluate t he conduction losses use the following equatio n : P = 0.42 x IF( AV) + 0.015 I F2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode).
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STPS2045CT/CF/CG
Fig. 2-1: Average current versus ambient temperature (=0.5) (per diode) (TO-220AB a n d D2P AK ). Fig. 2-2: Average current versus ambient temperature (=0.5) (per diode) (ISOWATT220AB).
Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (per diode) (TO-220AB and D2PAK).
Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (per diode) (ISOWATT220AB).
Fig. 4-1: Relative variation of thermal transient impedan ce junction to case versus pulse duration (TO-220AB and D2PAK).
Fig. 4-2: Relative variation of thermal transient impedanc e junction to case versus pulse duration (ISOWATT220AB).
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