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Part: STPS20L
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STPS20L25CT/CG
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 10 A 25 V 150 °C 0.35 V
K
A2 A1 K
FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS DESCRIPTION D ua l center tap Schottky rectifier suited to Swi t ch ed Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB and D2PAK, this device is especially intended for use as a rectifier at the secondary of 3.3V SMPS units.
A2
A1 K A2
A1
TO-220AB STPS20L25CT
D2PAK STPS20L25CG
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 145°C = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 25 30 10 20 220 1 3 - 65 to + 150 150 10000 Unit V A A A A A °C °C V/µs
tp = 10 ms Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square
dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj
1/5
October 1998 - Ed : 3A
STPS20L25CT/CG
THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 1.5 0.8 0.1 Unit °C/W
When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test : * tp = 380 µs, < 2%
Min.
Typ. 125
Max. 800 250 0.46 0.35 0.56 0.48
Unit µA mA V
VR = VRRM IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.41 0.30
To evaluate the maximum conduction losses use the following equation : P = 0.22 x IF(AV) + 0.013 IF2(RMS)
Fig.1 : Average forward power dissipation versus average forward current.
PF(av)(W) 5
= 0.05
Fig.2 : Average forward current versus ambient temperature ( = 0.5).
IF(av)(A)
Rth(j-a)=Rth(j-c)
12
= 0.1 = 0.2 = 0.5
4 3 2
T
10 8
=1
6 4 2
T
Rth(j-a)=50°C/W
1 IF(av) (A) 0 0 1 2 3 4 5 6 7 8
=tp/T
tp
0
=tp/T
tp
Tamb(°C) 50 75 100 125 150
9
10
11
0
25
2/5
STPS20L25CT/CG
Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values).
IM(A) 200 180 160 140 120 100 80 60 IM 40 20 0 1E-3
Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c) 1.0 0.8
Tc=25°C Tc=75°C
0.6 0.4
= 0.5
= 0.2 = 0.1
Tc=100°C
T
0.2
t
=0.5
t(s) 1E-2 1E-1 1E+0
Single pulse
tp(s) 1.0E-2
0.0 1.0E-4
=tp/T
tp
1.0E-3
1.0E-1
1.0E+0
Fig.5 : Reverse leakage current versus reverse voltage applied (typical values).
5E+2 1E+2
Tj=125°C
Fig.6 : Junction capacitance versus reverse voltage applied (typical values).
C(nF)
IR(mA)
Tj=150°C
5.0
F=1MHz Tj=25°C
1E+1
1.0
1E+0 1E-1 1E-2
Tj=25°C
VR(V) 0 5 10 15 20 25
VR(V) 0.1 1 2 5 10 20 50
Fig.7 : Forward voltage drop versus forward current (maximum values).
Fig.8 : Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS20L25G only)
Rth(j-a) (°C/W) 80 70
100.0
IFM(A)
Typical values Tj=150°C
10.0
Tj=25°C
60 50 40 30 20
VFM(V)
1.0
Tj=125°C
10 0 0 4 8 12
0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
S(Cu) (cm²) 16 20 24 28 32 36 40
3/5
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