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Details, datasheet, quote on part number:TP0101T-T1
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Datasheet text preview:
TP0101T
P-Channel Enchancement-Mode MOSFET
Product Summary
VDS (V)
12
rDS(on) (W)
0.65 @ VGS = 4.5 V 0.85 @ VGS = 2.5 V
ID (A)
0.5 0.4
TO-236 (SOT-23)
G
1 3 D
S
2
Top View TP0101T (P0)* *Marking Code for TO-236
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Drain Current (T 150_C) Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Dissipation Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VD S VG S ID ID M IS PD TJ, Tstg
Limit
12 "8 0.5 0.39 3 0.5 0.23 0.15 55 to 150
Unit
V
A
W _C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #2833. A SPICE Model data sheet is available for this product (FaxBack document #5154).
Symbol
RthJA
Limit
550
Unit
_C/W
Siliconix S-44205--Rev. A, 31-Mar-95
1
New Product
TP0101T
Specificationsa
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current V(BR)DSS VG S ( t h ) IG S S ID S S VGS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 9.6 V, VGS = 0 V TJ = 55_C VDS v 5 V, VGS = 4.5 V VDS v 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 0.5 A rD S ( o n ) gfs VS D VGS = 2.5 V, ID = 0.4 A VDS = 5 V, ID = 0.5 A IS = 0.5 A, VGS = 0 V 2.5 A 0.5 0.45 0.69 1.3 0.9 1.2 0.65 0.85 W S V 12 0.65 "100 1 10 nA mA 25 V
Symbol
Test Conditions
Min
Typ
Max
Unit
On-State Drain Currentc Drain Current
ID(on)
Drain-Source On Resistancec On-Resistance Forward Transconductance c Diode Forward Voltage
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qg s Qg d Ciss Coss Crss VDS = 6 V, VGS = 0, f = 1 MHz VDS = 6 V, VGS =4.5 V 6V 45 ID ^ 0.5 A 0.5 2020 180 720 110 80 30 pF 3000 pC
Switchingd
Turn-On Time Time td(on) tr Turn-Off Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = 6 V RL = 12 W V, ID ^ -0.5 A, VGEN = -4.5 V RG = 6 W 7 25 19 9 12 35 ns 30 15
VPLJ01
2
New Product
Siliconix S-44205--Rev. A, 31-Mar-95
TP0101T
Typical Characteristics (25_C Unless Otherwise Noted)
6.0 5.0 I D Drain Current (A) 4.0 3.0 2.0 1.0 0 0 1 2 3 4 VDS Drain-to-Source Voltage (V)
Output Characteristics
2.0
Transfer Characteristics
TC = 55_C
VG S = 5 V 3.5 V 3V 2.5 V 2V 0.5, 1 V
4.5 V 4V I D Drain Current (A)
1.5
25_C 125_C
1.0
0.5
1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
4 350 300 rDS(on) On-Resistance ( W ) C Capacitance (pF) 3 250 200 150
Capacitance
2 VGS = 2.5 V 1 VGS = 4.5 V
Ciss 100 Coss 50 Crss
0 0 1 2 3 4 5 ID Drain Current (A)
0 0 3 6 9 12 VDS Drain-to-Source Voltage (V)
7 VGS Gate-to-Source Voltage (V) 6 5 4 3 2 1 0 0 600 VD S = 6 V ID = 0.5 A
Gate Charge
1.7
On-Resistance vs. Junction Temperature
rDS(on) On-Resistance ( W ) (Normalized)
1.5 VGS = 4.5 V ID = 0.5 A 1.3
1.1
0.9
1200
1800
2400
3000
0.7 50
0
50
100
150
Qg Total Gate Charge (nC)
TJ Junction Temperature (_C)
Siliconix S-44205--Rev. A, 31-Mar-95
3
New Product
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