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Details, datasheet, quote on part number:VQ1000J
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Datasheet text preview:
2N7000/7002, VQ1000J/P, BS170
N-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(BR)DSS Min (V)
rDS(on) Max (W)
5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V
VGS(th) (V)
0.8 to 3 1 to 2.5 0.8 to 2.5 0.8 to 2.5 0.8 to 3
ID (A)
0.2 0.115 0.225 0.225 0.5
Features
D D D D D Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage
Benefits
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage
Applications
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays
TO-226AA (TO-92) S 1 G G 2 S D 3 2 1
TO-236 (SOT-23)
3
D
Top View Top View 2N7000 Dual-In-Line D1 N S1 G1 NC G2 N S2 D2 1 2 3 4 5 6 7 Top View Plastic: VQ1000J Sidebraze: VQ1000P 14 13 12 11 10 9 8 D4 S4 G4 NC G3 G S3 D3 N S 3 Top View BS170 2 D 1 N TO-92-18RM (TO-18 Lead Form) 2N7002 (72)* *Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70226.
Siliconix S-52429--Rev. E, 28-Apr-97
1
2N7000/7002, VQ1000J/P, BS170
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Single Parameter
Drain-Source Voltage Gate-Source Voltage--Non-Repetitive Gate-Source Voltage--Continuous Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Dissipation TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Total Quad
VQ1000J/P BS170 60 "25 "20 0.225 0.14 1 1.3 0.52 96 2 0.8 62.5 156 0.83 W _C/W _C "20 0.5 0.175 A V
Symbol
VD S VG S M VG S ID ID M PD RthJA TJ, Tstg
2N7000 60 "40 "20 0.2 0.13 0.5 0.4 0.16 312.5
2N7002 60 "40 "20 0.115 0.073 0.8 0.2 0.08 625
VQ1000J 60 "30 "20 0.225 0.14 1 1.3 0.52 96
VQ1000P 60
Unit
Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range
55 to 150
Notes a. Pulse width limited by maximum junction temperature. b. tp v 50 ms.
Specificationsa for 2N7000 and 2N7002
Limits
2N7000 2N7002
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Voltage
Symbol
Test Conditions
VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = "15 V
Typb
Min
Max
Min
Max
Unit
V(BR)DSS VG S ( t h )
70 2.1 2.0
60 0.8 3
60 V 1 "10 "10 0 1 1000 1 500 mA nA 2.5
Gate-Body Leakage
IG S S
VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V
Zero Gate Voltage Drain Current Gate Voltage Drain Current
ID S S
TC = 125_C VDS = 60 V, VGS = 0 V TC = 125_C VDS = 10 V, VGS = 4.5 V VDS = 7.5 V, VGS = 10 V VGS = 4.5 V, ID = 0.075 A VGS = 5 V, ID = 0.05 A 0.35 1 4.5 3.2 5.8 2.4 4.4 100 0.5 0.075
On-State Drain Currentc Drain Current
ID(on)
0.5 5.3 7.5 13.5 5 9 80 7.5 13.5
A
Drain-Source
On-Resistancec
rD S ( o n )
TC = 125_C VGS = 10 V, ID = 0.5 A TJ = 125_C
W
Forward
Transconductance c
gfs go s
VDS = 10 V, ID = 0.2 A VDS = 5 V, ID = 0.05 A
Common Source Output Conductancec
mS
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V VGS = 0 V 25 V, f = 1 MHz 22 11 2 60 25 5 50 25 5 pF
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Siliconix S-52429--Rev. E, 28-Apr-97
2N7000/7002, VQ1000J/P, BS170
Specificationsa for 2N7000 and 2N7002
Limits
2N7000 2N7002
Parameter Switchinge
Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time
Symbol
Test Conditions
VDD = 15 V, RL = 25 W ID ^0.5 A, VGEN = 10 V RG = 25 W VDD = 30 V, RL = 150 W ID ^ 0.2 A, VGEN = 10 V RG = 25 W
Typb
Min
Max
Min
Max
Unit
tON tOFF tON tOFF
7 7 7 11
10 10 ns 20 20 VNBF06
Notes a. TA = 25_C unless otherwise noted.d. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v80 ms duty cycle v1%. d. This parameter not registered with JEDEC. e. Switching time is essentially independent of operating temperature.
Specificationsa for VQ1000J/P and BS170
Limits
VQ1000J/P BS170
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage
Symbol
Test Conditions
VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "10 V TJ = 125_C VDS = 0 V, VGS = "15 V VDS = 25 V, VGS = 0 V
Typb Min
Max
Min
Max
Unit
V(BR)DSS VG S ( t h ) IG S S
70 2.1
60 0.8 2.5 "100 "500
60 0.8 3 V
Gate-Body Leakage
nA "10 0.5
Zero Gate Voltage Drain Current On-State Drain Currentc
ID S S ID(on)
VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.2 A VGS = 10 V, ID = 0.2 A VGS = 10 V, ID = 0.3 A TJ = 125_C VDS = 10 V, ID = 0.2 A VDS = 10 V, ID = 0.5 A VDS =5 V, ID = 0.05 A 0.5 100 1 4 2.3 2.3 4.2 0.5
500 10
mA A
7.5 5 5.5 7.6 100 mS W
Drain-Source On-Resistancec On Resistance
rD S ( o n )
Forward Transconductance c Transconductance Common Source Output Conductancec
gfs go s
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS =25 V VGS = 0 V 25 V, f = 1 MHz 22 11 2 60 25 5 60 pF
Siliconix S-52429--Rev. E, 28-Apr-97
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