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Details, datasheet, quote on part number:X0203MA1BA2
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Datasheet text preview:
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X02xxxA
SENSITIVE GATE SCR
FEATURES IT(RMS) = 1.25A VDRM = 200V to 800V Low IGT < 200 µA
K G A
DESCRIPTION The X02xxxA series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required. T O92 (Plastic)
ABSOLUTE RATINGS (limiting values) Symbol IT(RM S) IT( AV) ITSM Parameter RMS on-state current (180° conduction angle) Mean on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/µs . Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 2mm from case Tl= 60°C Tl= 60°C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 1.25 0.8 25 22.5 2.5 30 - 40, + 150 - 40, + 125 260 A2s A/µs °C °C Unit A A A
I2t dI/ dt Tstg Tj Tl
Symbol VDRM VRRM
J anuary 1995
Parameter B Repetitive peak off-state voltage Tj = 125°C RGK = 1K 200
Voltage D 400 M 600 N 800
Unit V
1/5
X02xxxA
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to leads for DC Parameter Value 150 60 Unit °C/W °C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25°C MIN MAX VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IR G =10µA VD=VDRM ITM= 3 x IT( AV) dIG/dt = 0.1A/µs IG = 10mA IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 2.5A tp= 380µs VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR =35V dI/dt=10A /µs tp=100µs dV/dt=2V/µs VD= 67%VD RM RGK = 1 K Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 110°C Tj= 110°C Tj= 110°C MAX MIN MIN TYP MAX MAX MAX MAX MAX TYP MAX 15 200 Sensitivity 03 20 200 0.8 0.1 8 0.5 5 6 1.45 5 200 20 100 15 05 20 50 V V V µs mA mA V µA µA V/µs µs µA Unit IGM = 1.2 A (tp = 20 µs)
ORDERING INFORMATION
X
SCR TOP GLASS CURRENT
2/5
02
03
SENSITIVITY
M
A
PACKAGE : A = TO92 VOLTAGE
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X 02xxxA
F ig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead).
P (W)
P (W)
T le ad (oC )
1.2
360
O
1.2
Rt h( j- l) DC = 180 = 120 = 90
o o o
- 50
1.0 0.8 0.6 0.4 0.2 0.0 0
= 30 o = 60
o
1.0 - 70 0.8 0.6 0.4 0.2 - 11 0
Tamb ( C )
o
Rt h( j- a)
- 90
I T( AV)(A)
0. 1 0 .2 0. 3 0. 4 0. 5 0. 6 0 .7 0. 8 0.9
1
1.1 1. 2
0.0 0
20
40
60
80
1 00
12 0
1 40
F ig.3 : Average on-state current versus lead temp erature.
I T (AV ) (A)
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration.
Zt h(j-a )/Rth (j-a) 1. 00
1.4 1.2 1.0 0.8
= 180
o
DC
0. 10
0.6 0.4 0.2 0.0
0
T le ad ( C)
o
tp (s )
1 0 20 3 0 4 0 50 6 0 7 0 80 9 0 1 0 0 110 1 2 0 1 3 0
0. 01 1E-3
1E-2
1E-1
1 E+ 0
1 E+ 1
1 E +2 5 E + 2
F ig.5 : Relative variation of gate trigger current and h olding current versus junction temperature.
I gt [T j ] o I gt [Tj = 25 C] I h [T j ] o I h [T j =2 5 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITS M(A)
25
Tj in i tial = 2 5 C
o
10. 0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih
Tj (oC )
20 15
I gt
10 5
Numb er of cy cle s 20 40 60 80 10 0 120 14 0
0
0 1
10
100
100 0
3/5
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