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Details, datasheet, quote on part number:X0203NA1BA2
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Datasheet text preview:
®
X02xxxN
SENSITIVE GATE SCR
FEATURES IT(RMS) = 1.4A VDRM = 200V to 800V Low IGT < 200 µA
K A G
A
DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) * Parameter RMS on-state current (180° conduction angle) Mean on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/µs. IG = 10 mA Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Ttab= 90°C Ta=75°C Ttab= 90°C Ta=75°C tp = 8.3 ms tp = 10 ms I2t dI/dt Tstg Tj Tl tp = 10 ms Value 1.4 1.0 0.9 0.64 25 22.5 2.5 30 - 40, + 150 - 40, + 125 260 Unit A A A A A A A2s A/µs °C °C SOT223 (Plastic)
IT(AV) *
ITSM
* : With 5cm2 copper (e=35µm) surface under tab.
Symbol VDRM VRRM
Parameter B Repetitive peak off-state voltage Tj = 125°C RGK = 1K 200
Voltage D 400 M 600 N 800
Unit V
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May 1998 Ed: 1A
X02xxxN
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-t) Junction to ambient * Junction to tab for DC Parameter Value 60 25 Unit °C/W °C/W
* : With 5cm2 copper (e=35µm) surface under tab.
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25°C MIN MAX VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IRG =10µA VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.1A/µs IG = 10mA IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 2.8A tp= 380µs VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR=35V dI/dt=10A/µs tp=100µs dV/dt=2V/µs VD= 67%VDRM RGK = 1 K Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 110°C Tj= 110°C Tj= 110°C MAX MIN MIN TYP MAX MAX MAX MAX MAX TYP MAX 15 200 Sensitivity 03 20 200 0.8 0.1 8 0.5 5 6 1.5 5 200 20 100 15 05 20 50 V V V µs mA mA V µA µA V/µs µs µA Unit IGM = 1.2 A (tp = 20 µs)
ORDERING INFORMATION
X
SCR TOP GLASS CURRENT
02
03
SENSITIVITY
M
N
PACKAGE : N = SOT223 VOLTAGE
2/5
X02xxxN
Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Ttab).
P (W)
1. 4
360
O
P (W ) 1.4
R t h ( j- t)
Ttab (o C ) - 85
1. 2
DC
1.2
o
1. 0
= 1 80
1.0
R t h ( j- a)
- 95
0. 8 0. 6 0. 4 0. 2 0. 0 0.0 0. 2 0.4
= 30 o = 60
o
= 120 = 90
o
o
0.8 -105 0.6 0.4 - 11 5
Tamb ( C)
o
I T ( AV )(A)
0.2
1. 4
0. 6
0. 8
1. 0
1.2
0.0 0
20
40
60
80
100
120
-125 14 0
Fig.3 : Average on-state current versus tab temperature.
I T ( AV ) (A)
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration.
Zth (j- a)/ R th( j-a) 1.00
1. 6
DC
1. 4 1. 2 1. 0 0. 8 0. 6 0. 4 0. 2 0. 0
0 10 20 30 40 50
= 180
o
0.10
S t an da r d f oo t p r i nt , e( C u ) =3 5 m
Ttab ( C )
60 70 80 9 0 1 0 0 11 0 1 2 0 1 3 0
o
tp(s)
0.01 1 E -3
1 E -2
1E - 1
1E+0
1E +1
1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
I gt[Tj] o I gt[ Tj= 25 C ]
1 0. 0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih I gt
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
IT S M(A)
I h [ Tj] I h [ Tj=2 5 o C ]
25
T j in it ia l = 25 C
o
20 15 10
5
T j(oC)
0 20 40 60 80 100 120 140
N u mb e r o f c y c l e s
0 1
10
100
100 0
3/5
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