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Details, datasheet, quote on part number:Z0103DA1AA2
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Datasheet text preview:
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Z01xxxA
SENSITIVE GATE TRIACS
FEATURES IT(RMS) = 0.8A VDRM = 400V to 800V IGT 3mA to 25mA
A1 G A2
DESCRIPTION The Z01xxxA series of triacs uses a high performance T OP GLASS PNPN technolog y. These parts are intende d for general purpose applications where gate high sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/µs . IG = 50 mA Tl= 70 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 2mm from case Value 0.8 8.5 8 0.32 10 50 - 40, + 150 - 40, + 125 260 °C °C A2s A/µs Unit A A T O92 (Plastic)
I2 t dI/dt
Symbol VDRM VRRM
J anuary 1995
Parameter D Repetitive peak off-state voltage Tj = 125°C 400
Voltage M 600 S 700 N 800
Unit V
1/5
Z01xxxA
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Rth(j-l) Junction to ambient Junction to leads for D.C Junction to leads for A.C 360 ° conduction angle (F=50Hz) Parameter Value 150 80 60 Unit °C/W °C/W °C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=140 Tj= 25°C Quadrant 03 I-II-III IV VGT VGD tg t VD=12V (DC) RL=140 VD=VDRM RL=3.3k VD=VDRM IG = 40mA IT = 1.1A dIG/dt = 0.5A/µs IT= 50 mA Gate open IG= 1.2 IGT Tj= 25°C Tj= 125°C Tj= 25°C I -II-III-IV I -II-III-IV I -II-III-IV MAX MAX MAX MIN TYP 3 5 Sensitivity 07 5 7 1.5 0.2 2 09 10 10 10 25 25 V V µs mA Unit IGM = 1 A (tp = 20 µs)
IH * IL
Tj= 25°C Tj= 25°C I-III-IV II
MAX TYP TYP MAX MAX MAX MIN TYP
7 7 14
10 10 20 1.5 10
10 10 20
25 25 50
mA mA
VT M * IDRM IRRM dV/dt *
ITM= 1.1A tp= 380µs VD = VDRM VR = VRRM VD=67%VD RM Gate open (dI/dt)c = 0.35 A/ms
Tj= 25°C Tj= 25°C Tj= 110°C Tj= 110°C
V µA
200 10 20 20 50 50 100 V/µs
150 400 2 5 V/µs
(dV/dt)c *
Tj= 110°C
MIN TYP 1 1
* For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION
Z
TRIAC TOP GLASS CURRENT
2/5
01
07
SENSITIVITY
M
A
PACKAGE : A = TO92 VOLTAGE
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Z01xxxA
F ig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tlead).
P( W) 1
180
O
P (W )
T le ad (o C)
1
-6 5
Rth( j-l) R th (j-a)
= 180
0.8 0.6 0.4
o
= 1 20
o
0. 8 0. 6
-7 5 -8 5 -9 5
= 90 = 60
= 30
o o
o
0. 4 -1 05 0. 2
Tamb (oC)
0.2 0 0
I
0.1 0.2 0.3 0.4 0.5
T( R MS )
0.6
(A)
0.8
- 115 60 80 10 0 120 -1 25 1 40
0.7
0 0
20
40
F ig.3 : RMS on-state current versus case temperature.
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration.
I T (R MS ) (A)
Zt h(j-a )/Rth (j-a) 1. 00
1
0.8 0.6
= 180
o
0. 10
0.4 0.2
Tl ead( o C )
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130
0. 01 1E-3 1E-2 1E-1 1 E+ 0 1 E+ 1
tp (s )
1 E +2 5 E + 2
F ig.5 : Relative variation of gate trigger current and h olding current versus junction temperature.
I g t[Tj ] o I g t[T j=2 5 C ] Ih [Tj ] o Ih [Tj =2 5 C ]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITS M(A)
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Ig t
7
Tj in it i al = 25 C
o
6 5 4 3 2 1
Tj (oC ) Nu mber o f cy cle s
Ih
- 40
-20
0
20
40
60
80
1 00
12 0 1 40
0 1
10
1 00
10 00
3/5
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