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Details, datasheet, quote on part number:ZHCS1000TA
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Datasheet text preview:
SOT23 SILICON HIGH CURRENT SC HOTTKY BARRIER DIODE "SuperBAT"
ISSUE 2 - OCTOBER 1997 7
1
ZHC S1 0 0 0
C 1 A 3
FEATURES: · High current capability · Low V F APPLICATIONS: · Mobile telecomms, PCMIA & SCSI · DC-DC Conversion PARTMARKING DETAILS : ZS1
2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER C ont inuous Reverse Voltage Forw ard Current Forw ard Voltage @ IF = 1 0 0 0 mA(t yp) Average Peak Forward Current;D.C.= 5 0 % Non Repetitive Forward Current t100µs t10ms Pow er Dissipation at Tamb= 2 5 ° C St orage Temperature Range Junct ion Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tst g Tj V ALUE 40 1000 425 1750 12 5 .2 500 -5 5 to + 1 5 0 125
SOT2 3
UNIT V mA mV mA A A mW °C °C
ELEC TRIC AL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER Reverse Breakdown V olt age Forw ard Voltage SYMBOL V (BR)R VF MIN. 40 TYP. 60 240 265 305 355 390 425 495 420 50 25 12 270 290 340 400 450 500 600 -- 100 MAX. UNIT V mV mV mV mV mV mV mV mV µA pF ns C ONDITIONS. IR= 3 0 0 µA IF= IF= IF= IF= IF= IF= IF= IF= * 5 0 mA* 1 0 0 mA* 2 5 0 mA* 5 0 0 mA* 7 5 0 mA* 1 0 0 0 mA* 1 5 0 0 mA* 1 0 0 0 mA,Ta= 1 0 0 ° C
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD t rr
V R= 3 0 V f = 1 MHz , V R= 2 5 V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA
* Measured under pulsed conditions. Pulse width= 3 0 0 µs. Duty cycle 2%
ZHCS1 0 0 0
TYPICAL CHARACTERISTICS
10 100m
IR - Reverse Current (A)
10m
+125°C
IF - Forward Current (A)
1
1m 100u
+100°C
100m
+50° C
10u 1u 100n
+25°C
10m
+125°C +25°C -55°C
-55° C
1m 0 0.1 0.2 0.3 0.4 0.5 0.6
10n 0 10 20 30
VF - Forward Voltage (V)
VR - Reverse Voltage (V)
IR v VR
IF v VF
Typical
PF(av) - Avg Pwr Diss (W)
0.8
0.6
Typical Tj=125°C
IF(av) - Avg Fwd Cur (A)
t1
DC
D=t1/t
p
I F(pk) tp I F(av) =D x I
F( pk)
0.6
D=0.5 D=0.2
0.4
t1 D=t1/t
0.4
p
I F(pk)
D=0.1
0.2
DC D=0.5 D=0.2 D=0.1 D=0.05
0.2
D=0.05
tp =D x I F (av)I
F(p k)
0
75
85
95
105
115
125
0 0 0.4
x P (av)=I F (av) V F
F
0.8
1.2
TC - Case Temperature (°C)
IF(av) - Avg Fwd Curr (A)
IF(av) v TC
125 200
PF(av) v IF(av)
100
Rth=100° C/W Rth=200° C/W Rth=300° C/W
CD - Diode Capacitance (pF)
Ta - Ambient Temp (°C)
Typical
100
75 1 10 100
0 0 10 20 30
VR - Reverse Voltage (V)
VR - Reverse Voltage (V)
Ta v VR
CD v VR
ZHCS1000
TYPICAL CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
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