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Details, datasheet, quote on part number:ZUMT618TA
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Datasheet text preview:
Super323TM SOT323 NPN SILICON POWER(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998 FEATURES
ZUMT618
*
* * * *
500mW POWER DISSIPATION
IC CONT 1.25A 3A Peak Pulse Current Excellent HFE Characteristics Up to 3A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS * Corded telecoms. * Boost functions in DC-DC converters * Motor driver functions
DEVICE TYPE ZUMT618
COMPLEMENT ZUMT718
PARTMARKING T62
RCE(sat) 125m at1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C SYMBOL V CBO VCEO VEBO ICM IC IB Ptot VALUE 20 20 5 4 1.25 500 385 500 -55 to +150 UNIT V V V A A mA mW
Operating and Storage Temperature Range
Tj:Tstg
°C
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT618
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 16.5 40 80 140 155 955 840 200 300 200 100 40 20 420 450 380 300 180 60 210 10 50 275 MHz pF ns ns MIN. 20 20 5 10 10 10 25 60 115 200 250 1100 1100 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC= 100µA IC= 10mA* IE= 100µA VCB= 16V VEB= 4V VCES= 16V IC= 100mA, IB=10mA* IC= 250mA, IB= 10mA* IC= 500mA, IB=10mA* IC= 1A, IB=20mA* IC= 1.25A, IB=50mA* IC= 1.25A, IB=50mA* IC= 1.25A, VCE= 2V* IC= 10mA, VCE= 2V* IC= 100mA, VCE= 2V* IC= 500mA, VCE=2V* IC= 1A, VCE=2 V* IC= 2A, VCE=2V* IC=4A, VCE= 2V* IC= 50mA, VCE=10V f= 100MHz VCB= 10V, f=1MHz VCC=10 V, IC=1A IB1=IB2=100mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT Cobo t(on) t(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
ZUMT618
TYPICAL CHARACTERISTICS
0.4
+25°C
0.4
IC/IB=50
0.3
0.3
VCE(sat) - (V)
VCE(sat) - (V)
IC/IB=10 IC/IB=50 IC/IB=100
0.2
0.2
-55°C +25°C +100°C +150°C
0.1
0.1
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
IC - Collector Current (A) VCE(sat) v IC
IC - Collector Current (A) VCE(sat) v IC
VCE=2V
600
1.0 0.8
IC/IB=50
hFE - Typical Gain
+100°C
400
+25°C
VBE(sat) - (V)
0.6 0.4 0.2
-55°C +25°C +100°C +150°C
-55°C
200
0 1m 10m 100m 1 10
0
1m
10m
100m
1
10
IC - Collector Current (A) hFE v IC
IC - Collector Current (A) VBE(sat) v IC
1.0 0.8
10
IC - Collector Current (A)
VBE(on) - (V)
0.6 0.4 0.2 0 1m 10m 100m 1 IC - Collector Current (A) 10
-55°C +25°C +100°C +150°C
1
DC 1s 100ms 10ms 1ms 100µs
100m
10m 100m
1
10
100
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
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