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Details, datasheet, quote on part number:ZUMT717TA
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Datasheet text preview:
Super323TM SOT323 PNP SILICON POWER TM (SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998 FEATURES
ZUMT717
*
* * * * *
500mW POWER DISSIPATION
IC CONT 1.5A 3A Peak Pulse Current Excellent HFE Characteristics Up To 3A (pulsed) Extremely Low Saturation Voltage Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS * Negative boost functions in DC-DC converters * Supply line switching in mobile phones and pagers * Motor drivers in camcorders and mini disk players
DEVICE TYPE ZUMT717 COMPLEMENT ZUMT617 PARTMARKING T71 RCE(sat) 150m at 1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb =25°C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE -12 -12 -5 -3 -1.25 -200 385 500 -55 to +150 UNIT V V V A A mA mW
Operating and Storage Temperature Tj:Tstg Range
°C
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) -25 -55 -110 -160 -185 -990 -850 300 300 200 125 75 30 490 450 340 250 140 80 220 15 50 135 MHz pF ns ns MIN. -12 -12 -5 -10 -10 -10 -40 -100 -175 -215 -240 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV CONDITIONS. IC= -100µA IC= -10mA* IE= -100µA VCB=-10V VEB=-4V VCES=-10V IC= -0.1A, IB= -10mA* IC= -0.25A, IB=-10 mA* IC= -0.5A, IB=-10 mA* IC= -1A, IB= -50mA* IC= -1.25A, IB= -100mA* IC= -1.25A, IB= -100mA* IC= -1.25A, VCE= 2V* IC= -10mA, VCE=-2V* IC= -0.1A, VCE= -2V* IC= -0.5A, VCE= -2V* IC= -1.25A, VCE=-2V* IC= -2A, VCE= -2V* IC= -3A, VCE= -2V* IC= -50mA, VCE=-10 V f= 100MHz VCB= -10V, f=1MHz VCC= -10V, IC=-1A IB1=IB2=-100mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
-1100 mV -1000 mV
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT Cobo t(on) t(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
ZUMT717
TYPICAL CHARACTERISTICS
0.4
+25°C
0.4
IC/IB=50
0.3
0.3
VCE(sat) - (V)
VCE(sat) - (V)
IC/IB=10 IC/IB=50 IC/IB=100
0.2
0.2
-55°C +25°C +100°C +150°C
0.1
0.1
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
IC - Collector Current (A) VCE(sat) v IC
IC - Collector Current (A) VCE(sat) v IC
800
VCE=2V
1.0 0.8
IC/IB=50
hFE - Typical Gain
600
+100°C
VBE(sat) - (V)
0.6 0.4 0.2
-55°C +25°C +100°C +150°C
400
+25°C
200
-55°C
0 1m 10m 100m 1 10
0
1m
10m
100m
1
10
IC - Collector Current (A) hFE v IC
IC - Collector Current (A) VBE(sat) v IC
1.0 0.8
10
IC - Collector Current (A)
VBE(on) - (V)
1
DC 1s 100ms 10ms 1ms 100µs
0.6 0.4 0.2 0
-55°C +25°C +100°C +150°C
100m
1m
10m
100m
1
10
10m 100m
1
10
100
IC - Collector Current (A) VBE(on) v IC
VCE - Collector Emitter Voltage (V)
Safe Operating Area
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