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Details, datasheet, quote on part number:ZXM64N03XTA
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Datasheet text preview:
ZXM64N03X
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
MSOP8
APPLICATIONS DC - DC Converters
ORDERING INFORMATION
DEV ICE ZXM 64 N0 3XTA ZXM 64 N0 3XTC R E E L SIZE (inches) 7 13 T A P E WIDTH (mm) 1 2 m m embossed 1 2 m m embossed Q UAN TITY P E R REEL 1 0 0 0 units 4 0 0 0 units
1
8
2
67 5
G
3
DEVICE MARKING ZXM4N03
PROVISIONAL ISSUE A - JULY 1999 129
4
Power Management Functions Disconnect switches Motor control
S S S D D D D
Top View
ZXM64N03X
ABSOLUTE MAXIMUM RATINGS.
PARAM ETER D r a i n - S o u r c e Voltage G a t e - Source Voltage C o n t i n u o u s Drain Current (V G S= 1 0 V ; T A= 2 5 ° C ) ( b ) (V G S= 1 0 V ; T A= 7 0 ° C ) ( b ) P u l s e d Drain Current (c) C o n t i n u o u s Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) P o w e r Dissipation at T A= 2 5 ° C (a) L i n e a r Derating Factor P o w e r Dissipation at T A= 2 5 ° C (b) L i n e a r Derating Factor O p e r a t i n g and Storage Temperature Range SY MB OL VDSS VGS ID IDM IS ISM PD PD T j: T s t g LIMIT 30 20 UNIT V V A A A A W mW/°C W mW/°C °C
-55 to +150
THERMAL RESISTANCE
PAR A METER J u n c t i o n to Ambient (a) J u n c t i o n to Ambient (b) S YM BO L
VALUE 113 70
R R
JA JA
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
PROVISIONAL ISSUE A - JULY 1999 130
5.0 4.0 30 2.4 30 1.1 8.8
1.8 14.4
UNIT °C/W °C/W
ZXM64N03X
CHARACTERISTICS
Max Power Dissipation (Watts)
100
Refer Note (a)
2.0
ID - Drain Current (A)
1.5
Refer Note (b) Refer Note (a)
10
1.0
1
DC 1s 100ms 10ms 1ms 100us
0.5
100m
0.1
1
10
100
0
0
20
40
60
80
100
120
140
160
VDS - Drain-Source Voltage (V)
T - Temperature (°C)
Safe Operating Area
Ref Note (a)
Derating Curve
Thermal Resistance (°C/W)
80
120
60
Themal Resistance (°C/W)
90
40
D=0.5
60
D=0.5
20
D=0.2 D=0.1
30
D=0.2 D=0.1 Single Pulse
0 0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
0 0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Refer Note (b)
Transient Thermal Impedance
Refer Note (a)
PROVISIONAL ISSUE A - JULY 1999 131
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